Issues and Reliability of High-Density FeRAMs

概要

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We discuss some technical issues on the realization of high-density ferroelectric random access memory (FeRAM). Due to reliability concerns of ferroelectric materials, such as fatigue, retention, and imprint, an extra sensing margin is required. In order to overcome these drawbacks, we have improved the ferroelectric capacitor process and design architecture. The fatigue and imprint degradations of the ferroelectric capacitor are significantly suppressed using the newly developed (Bi1-xLax)4Ti3O12 (BLT) films. The design architecture was improved using the split word line (SWL) cell array and current gain cell (CGC) operation. Using the above BLT capacitors and design architectures, we have obtained a high sensing margin, a high cell efficiency, and a small cross-talk noise in high-density FeRAMs.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-04-15