Park Young-Jin | New Device Team, Memory R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri Bubal-eub Ichon-si, Kyoungki-do 467-701, Korea
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概要
- Park Young-Jinの詳細を見る
- 同名の論文著者
- New Device Team, Memory R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri Bubal-eub Ichon-si, Kyoungki-do 467-701, Koreaの論文著者
関連著者
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Lee Seaung-suk
New Device Team Memory R&d Division Hynix Semiconductor Inc.
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Park Young-jin
New Device Team Memory R&d Division Hynix Semiconductor Inc.
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Lee Seok
New Device Team Memory R&d Division Hynix Semiconductor Inc.
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Noh Keum
New Device Team, Memory R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri Bubal-eub Ichon-si, Kyoungki-do 467-701, Korea
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Lee Seaung-Suk
New Device Team, Memory R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri Bubal-eub Ichon-si, Kyoungki-do 467-701, Korea
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Park Young-Jin
New Device Team, Memory R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri Bubal-eub Ichon-si, Kyoungki-do 467-701, Korea
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Kang Hee-bok
New Device Team R&d Division Hynix Semiconductor Inc.
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Yang Beelyong
New Device Team Memory R&d Division Hynix Semiconductor Inc.
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Kang Young
New Device Team Memory R&d Division Hynix Semiconductor Inc.
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Yang Beelyong
Department of Materials Science & Engineering, Kumoh National Institute of Technology, 188 Shinpyong-dong, Gumi-si, Gyeongbuk 730-701, Korea
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Lee Seok
New Device Team, Memory R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri Bubal-eub Ichon-si, Kyoungki-do 467-701, Korea
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Kang Young
New Device Team, Memory R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri Bubal-eub Ichon-si, Kyoungki-do 467-701, Korea
著作論文
- Issues and Reliability of High-Density FeRAMs
- Imprint Characteristics of Ferroelectric Thin Films at Elevated Storage and Operation Temperatures