Stacked Pt/SrBi_2Ta_<2-x>Nb_xO_9/Pt/IrO_x/Ir Capacitor on Poly Plug(Semiconductors)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-01-15
著者
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KWEON Soon
Department of Materials Science and Engineering, Korea Advanced Institute of Science andTechnology
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CHOI Si
Department of Materials Science and Engineering, Korea Advanced Institute of Science andTechnology
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YEOM Seung
Memory Research and Development Division, HYUNDAI Electronics Industries Co., Ltd.
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ROH Jae
Memory Research and Development Division, HYUNDAI Electronics Industries Co., Ltd.
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Yang Woo
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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Yeom S
Memory Research And Development Division Hynix Semiconductor Inc.
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Roh J‐s
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Roh J
Memory Research And Development Division Hynix Semiconductor Inc.
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Roh Jae-sung
Advanced Process-capacitor Memory Research & Development Division Hyundai Electronics Industries
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Yeom S
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Yeom Seung
Memory Research And Development Division Hynix Semiconductor Inc.
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KWEON Soon
Memory Research and Development Division, Hynix Semiconductor Inc.
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Yang W
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Yeom Seung
Memory R&d Division Hynix Semiconductor Inc.
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Choi S
Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology
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Choi Si
Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology
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Roh Jae
Memory R & D Division Hynix Semiconductor Inc.
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Roh J‐s
Memory Research And Development Division Hynix Semiconductor Inc.
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Yang Woo
Memory Research And Development Division Hynix Semiconductor Inc.
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Kweon Soon
Memory Research And Development Division Hynix Semiconductor Inc.
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Kweon Soon
Memory R&d Division Hynix Semiconductor Inc.
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Kweon Soon
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Kusung-dong, Yusung-gu, Taejon 305-701, Korea
関連論文
- Platinum Hillocks in Pt/Ti Film Stacks Deposited on Thermally Oxidized Si Substrate : Semiconductors
- Characteristics of TaO_xN_y Gate Dielectric with Improved Thermal Stability
- Dependence of Switching Characteristics on Fabrication Process and Capacitor Size for Pt/SBT/Pt Ferroelectric Capacitor
- Dependence of Switching Characteristics on Fabrication Process and Capacitor Size for Pt/SBT/Pt Ferroelectric Capacitor
- Dependence of Switching Characteristics on Fabrication Process and Capacitor Size for Pt/SBT/Pt Ferroelectric Capacitor
- Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
- Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
- Characteristics of Multiple Thickness Gate Oxides Using Oxidation Enhancement by Si Implantation
- Ohmic Contact Properties of Tungsten Plug and Ferroelectric Properties of (Bi,La)_4Ti_3O_ Thin Film in Stacked Capacitor Structure
- Electrical Properties of Bi_LaxTi_3O_ Ferroelectric Thin Films Prepared by Metalorganic Decomposition Method
- Stacked Pt/SrBi_2Ta_Nb_xO_9/Pt/IrO_x/Ir Capacitor on Poly Plug(Semiconductors)
- Effects of Bottom Electrodes (Pt and IrO_2) on Physical and Electrical Properties of Bi_La_xTi_3O_Thin Film : Electrical Properties of Condensed Matter
- Effects of Bottom Electrodes (Pt and IrO_2) on Physical and Electrical Properties of Bi_La_xTi_3O_ (BLT) Thin Film
- Thermal Stability and Electrical Properties of SrBi_2TaNb_XO_9/IrO_x Capacitors With Pt Top Electrode : Semiconductors
- Effects of Crystallization Annealing Sequence for SrBi_2Ta_2O_9(SBT)Film on Pt/SBT Interface Morphology and Electrical Properties of Ferroelectric Capacitor
- Investigation of Ruthenium Electrodes for (Ba, Sr)TiO_3 Thin Films
- Effects of Post-Annealing on the Conduction Properties of Pt/(Ba, Sr)TiO_3/Pt Capacitors for Dynamic Random Access Memory Applications
- Low Temperature Chemical Vapor Deposition of (Ba, Sr)TiO_3 Thin Films for High Density Dynamic Random Access Memory Capacitors
- Study of Bump Formation in Integrated Chemical Vapor Deposition-Physical Vapor Deposition Aluminum Filling Process
- P and As Implantation Enhanced Formation of Metal-Free Oxide on WSi_2
- Effects of High-Temperature Metal-Organic Chemical Vapor Deposition of Pb(Zr, Ti)O_3 Thin Films on Structural Stabilities of Hybrid Pt/IrO_2/Ir Stack and Single-Layer Ir Bottom Electrodes
- Ferroelectric Memories using Randomly Oriented (Bi_La_x)_4Ti_3O_ Films
- Thickness Effects on Physical and Ferroelectric Properties of Bi_La_Ti_3O_ (BLT) Films with c-axis-Preferred and Random Orientations
- TaO_xN_y Gate Dielectric with Improved Thermal Stability
- Leakage Current Characteristics of (Ba,Sr) TiO_3 Thin Films Deposited on Ru Electrodes Prepared by Metal Organic Chemical Vapor Deposition
- ED2000-50 / SDM2000-50 Oxidation Behaviors of Ti-Polycide Gate Stack During Gate Re-oxidation
- ED2000-50 / SDM2000-50 Oxidation Behaviors of Ti-Polycide Gate Stack During Gate Re-oxidation
- Preparation of Platinum Thin Films by Metalorganic Chemical Vapor Deposition Using Oxygen-Assisted Decomposition of (Ethylcyclopentadienyl)trimethylplatinum
- Properties of Ru Thin Films Fabricated on TiN by Metal-Organic Chemical Vapor Deposition
- Pb(Zr_xTi_)O_3 Thin Film Fabricated on Heterogeneous Under-Layer of Pt and SiO_2 in High Density Ferroelectric Random Access Memory (FeRAM) Capacitor
- The Property of Ta_2O_5 On Chemical Vapor Deposited Ru Film Fabricated using Tris (2,4-Octanedionato)ruthenium for Application to Dynamic Random Access Memory Capacitor : Semiconductors
- Thermal Stability and Electrical Properties of SrBi2Ta2-xNbxO9/IrOx Capacitors with Pt Top Electrode
- Spontaneous Rupture of Internal Iliac Artery Secondary to Anticoagulant Therapy
- Effects of High-Temperature Metal-Organic Chemical Vapor Deposition of Pb(Zr,Ti)O3 Thin Films on Structural Stabilities of Hybrid Pt/IrO2/Ir Stack and Single-Layer Ir Bottom Electrodes
- Thickness Effects on Physical and Ferroelectric Properties of Bi3.35La0.85Ti3O12 (BLT) Films with $c$-axis-Preferred and Random Orientations