Pb(Zr_xTi_<1-x>)O_3 Thin Film Fabricated on Heterogeneous Under-Layer of Pt and SiO_2 in High Density Ferroelectric Random Access Memory (FeRAM) Capacitor
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2003-12-15
著者
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Choi E
Memory Research And Development Division Hynix Semiconductor Inc.
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YEOM Seung
Memory Research and Development Division, HYUNDAI Electronics Industries Co., Ltd.
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Kim Nam
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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Yeom S
Memory Research And Development Division Hynix Semiconductor Inc.
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Roh J
Memory Research And Development Division Hynix Semiconductor Inc.
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Roh Jae-sung
Advanced Process-capacitor Memory Research & Development Division Hyundai Electronics Industries
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Roh Jae-sung
Memory Research And Development Division Hynix Semiconductor Inc.
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Roh Jae-sung
Memory R&d Division Hynix Semiconductor Inc.
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Yeom S
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Yeom Seung
Memory Research And Development Division Hynix Semiconductor Inc.
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KWEON Soon
Memory Research and Development Division, Hynix Semiconductor Inc.
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CHOI Eun
Memory Research and Development Division, Hynix Semiconductor Inc.
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Kim N
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Kim Nam
Memory Research And Development Division Hynix Semiconductor Inc.
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Kim Nam
Memory Product And Technology Division Samsung Electronics
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Yeom Seung
Memory R&d Division Hynix Semiconductor Inc.
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Kim Nam
Memory R&d Division Hynix Semiconductor Inc.
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SOHN Hyun-Chul
Memory R&D Division, Hynix Semiconductor Inc.
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SUN Ho-Jung
Memory Research and Development Division, Hynix Semiconductor Inc.
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Sohn H‐c
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Sohn Hyun-chul
Memory R&d Division Hynix Semiconductor Inc.
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Choi Eun
Memory R&d Division Hynix Semiconductor Inc.
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Roh J‐s
Memory Research And Development Division Hynix Semiconductor Inc.
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Sun H‐j
Memory Research And Development Division Hynix Semiconductor Inc.
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Kweon Soon
Memory Research And Development Division Hynix Semiconductor Inc.
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Kweon Soon
Memory R&d Division Hynix Semiconductor Inc.
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Sun Ho-jung
Memory Research And Development Division Hynix Semiconductor Inc.
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Sun Ho-jung
Memory Research And Development Division Hynix Semiconductor Incorporation
関連論文
- Platinum Hillocks in Pt/Ti Film Stacks Deposited on Thermally Oxidized Si Substrate : Semiconductors
- Characteristics of TaO_xN_y Gate Dielectric with Improved Thermal Stability
- Dependence of Switching Characteristics on Fabrication Process and Capacitor Size for Pt/SBT/Pt Ferroelectric Capacitor
- Dependence of Switching Characteristics on Fabrication Process and Capacitor Size for Pt/SBT/Pt Ferroelectric Capacitor
- Dependence of Switching Characteristics on Fabrication Process and Capacitor Size for Pt/SBT/Pt Ferroelectric Capacitor
- Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
- Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
- Characteristics of Multiple Thickness Gate Oxides Using Oxidation Enhancement by Si Implantation
- Ohmic Contact Properties of Tungsten Plug and Ferroelectric Properties of (Bi,La)_4Ti_3O_ Thin Film in Stacked Capacitor Structure
- Electrical Properties of Bi_LaxTi_3O_ Ferroelectric Thin Films Prepared by Metalorganic Decomposition Method