Effects of Post-Annealing on the Conduction Properties of Pt/(Ba, Sr)TiO_3/Pt Capacitors for Dynamic Random Access Memory Applications
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-07-01
著者
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Oh Ki-young
Lg Semicon
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Roh J‐s
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Roh J
Memory Research And Development Division Hynix Semiconductor Inc.
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Roh Jae-sung
Advanced Process-capacitor Memory Research & Development Division Hyundai Electronics Industries
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Kim Jung-jin
Research Center For Interdisciplinary Research Tohoku University
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Jeon Y‐c
Process Group Advanced Technology Laboratory Lg Semicon
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Jeon Yoo-chan
Process Group Advanced Technology Laboratory Lg Semicon Co. Ltd.
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Oh Ki-young
Process Group Advanced Technology Laboratory Lg Semicon
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JOO Jae-Hyun
Process Group, Advanced Technology Laboratory, LG Semicon
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SEON Jeong-Min
Process Group, Advanced Technology Laboratory, LG Semicon
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ROH Jae-Sung
Process Group, Advanced Technology Laboratory, LG Semicon
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KIM Jae-Jeong
Process Group, Advanced Technology Laboratory, LG Semicon
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Kim Jae-jeong
Process Team R&d Division Lg Semicon Co Ltd.
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Roh J‐s
Memory Research And Development Division Hynix Semiconductor Inc.
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Joo Jae-hyun
Process Team R&d Division Lg Semicon Co Ltd.
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Seon Jeong-min
Process Group Advanced Technology Laboratory Lg Semicon
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Joo Jae-hyun
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Jeon Yoo-chan
Process Group Advanced Technology Laboratory Lg Semicon
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- Effects of Post-Annealing on the Conduction Properties of Pt/(Ba, Sr)TiO3/Pt Capacitors for Dynamic Random Access Memory Applications