Electrical Stress Effect on Poly-Si Thin Film Transistors Fabricated by Metal Induced Lateral Crystallization
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概要
- 論文の詳細を見る
Electrical stress effects on polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated by metal induced lateral crystallization at 500° C have been investigated. Leakage current decreased by four orders of magnitude after the electrical stress in both n-channel TFTs and p-channel TFTs. It turned out that the electrical stress between the drain and source was more effective than that between the gate and source. Polarity of the electrical stress turned out to be also important for depression of the leakage current.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-08-15
著者
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Ihn Tae-hyung
Division Of Materials Science Ancl Engineering College Of Engineering Seoul National University
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Joo Seung-ki
Division Of Materials Science Ancl Engineering College Of Engineering Seoul National University
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Jeon Yoo-chan
Process Group Advanced Technology Laboratory Lg Semicon
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Jeon Yoo-Chan
Process Group, Advanced Technology Laboratory, LG Semicon Co., Ltd.,
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Lee Byung-Il
Division of Materials Science and Engineering, Seoul National University, San 56-1, Shillim-dong,
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Lee Byung-Il
Division of Materials Science ancl Engineering, College of Engineering, Seoul National University
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Joo Seung-Ki
Division of Materials Science and Engineering, Seoul National University, San 56-1, Shillim-dong,
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Ihn Tae-Hyung
Division of Materials Science and Engineering, Seoul National University, San 56-1, Shillim-dong,
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