NiFeCo/Cu/Co System for Magnetoresistive Random Access Memory (MRAM)

スポンサーリンク

概要

• 論文の詳細を見る

• Memory characteristics of NiFeCo/Cu/Co system deposited on 4°tilt-cut Si (111) substratc have been investigated. With a Cu (50A) underlayer on 4° tilt-cut Si (111) substrate, NiFeCo/Cu/Co multilayers developed in-plane uniaxial magnetic anisotropy and they showed perfectly square R-H curves, which represent the possibility of a MRAM application. In large scale test MRAM cells consisting of [NiFeCo (60A)/Cu (40A)/Co (30A)/Cu (40A)]_5 multilayers, 400 μV voltage difference between the two magnetoresistive states was obtained with 2 A of word current at 1 mA of fixed sense current, which has been believed to show high potentials of NiFeCo/Cu/Co system in a MRAM application

• 社団法人映像情報メディア学会の論文
• 1996-11-22

著者

• Kim H‐j

  Seoul National Univ. Seoul Kor

• Lee B‐i

  Seoul National Univ. Seoul Kor

• Lee Byung-ll

  Division of Materials Science and Engineering Seoul National University

• Joo Seung-Ki

  Division of Materials Science and Engineering Seoul National University

• Joo S‐k

  Seoul National Univ. Seoul Kor

• Joo Seung-ki

  School Of Material Science And Engineering Seoul-national University

• Joo Seung-ki

  Division Of Materials Science And Engineering College Of Engineering Seoul National University

• Joo Seung-ki

  Division Of Materials Science And Engineering Seoul National Univ.

• Kim Hyeong-Jun

  School of Materials Science and Engineering , Seoul National University

• Kim Hyeong-Jun

  Division of Materials Science and Engineering Seoul National University

• Kim Hyeong-jun

  School Of Materials Science And Engineering Seoul National University

• Lee B‐i

  School Of Material Science And Engineering Seoul-national University

• Joo Seung-ki

  Division Of Materials Science Ancl Engineering College Of Engineering Seoul National University

関連論文

• Perpendicular Magnetic Anisotropy and Layered Structure in Co/Pd Multilayered Thin Films
• Effect of Interface State on the Magnetic Properties in Co/Pd and Co/Pt Multilayered Thin Films
• An Eager and Pessimistic Space Reservation Method for Tables Frequently Accessed by Concurrent Transactions (Special Issue on New Generation Database Technologies)
• Compositional variation of magnetoresistance characteristics in NiFe/Cu/Co spin valve thin films
• Effects of tilt-cut Si substrates on crystal structure and magnetic anisotropy of metallic ferromagnetic thin films
• NiFeCo/Cu/Co System for Magnetoresistive Random Access Memory (MRAM)
• NiFeCo/Cu/Co System for Magnetoresistive Random Access Memory (MRAM)
• Scanning Rapid Thermal Annealing Process for Poly Silicon Thin Film Transistor
• Characterization of magnetoresistance in ferromagnetic/oxide/ferromagnetic structured thin films
• Characterization of magnetoresistance in ferromagnetic/oxide/ferromagnetic structured thin films
• Effects of Substrate Surface Topology on NiFe/Cu/Co Spin Valve Characteristics
• A Study on the Switching Charactetistics of NiFe/Co/Cu/Co Pseudo Spin Valve MRAM Cells (第4回アジア情報記録技術シンポジウム〔英文〕)
• A Study on the Switching Characteristics of NiFe/Co/Cu/Co Pseudo Spin Valve MRAM Cells
• Structure and magnetic properties of Ni-Zn ferrite thin films prepared by RF magnetron sputtering at room temperature
• Structure and magnetic properties of Ni-Zn ferrite thin films prepared by RF magnetron sputtering at room temperature
• Refinement and Validation of Software Requirements Using Incremental Simulation
• Introduction of Selectively Nucleated Lateral Crystallization of Lead Zirconate Titanate Thin Films for Fabrication of High-Performance Ferroelectric Random Access Memory
• FABRICATION OF POLY-SI TFT ON THE GLASS SUBSTRATE BY METAL-INDUCED LATERAL CRYSTALLIZATION
• FABRICATION OF POLY-SI TFT ON THE GLASS SUBSTRATE BY METAL-INDUCED LATERAL CRYSTALLIZATION
• Magnetoresistance of ferromagnetic tunnel junctions with Al2O3 formed by plasma-assisted atomic layer controlled deposition (マルチメディアストレージ--第5回アジア情報記録技術シンポジウム)
• A study on the oxidation kinetics of ultrathin cobalt films (マルチメディアストレージ--第5回アジア情報記録技術シンポジウム〔英文〕)
• Magnetoresistance of ferromagnetic tunnel junctions with Al_2O_3 formed by Plasma-Assisted Atomic Layer Controlled Deposition
• A study on the oxidation kinetics of ultrathin cobalt films
• Characterization of Spin Valve Films Exchange Biased by Co/Ru/Co Synthetic Antiferromagnets Prepared on 4 Degree Tilt-Cut Si(111)Wafer (第4回アジア情報記録技術シンポジウム〔英文〕)
• Characterization of spin valve films exchange biased by Co/Ru/Co synthetic antiferromagnets prepared on 4 degree tilt-cut Si(111) wafer
• An enhanced structure for multilevel magnetoresistive random access memory(MRAM)
• An enhanced structure for multilevel magnetoresistive random access memory(MRAM)
• A New Multilayered Structure for Advanced Magnetoresistive Random Access Memory (MRAM) Applications
• A New Multilayered Structure for Advanced Magnetoresistive Random Access Memory(MRAM) Applications
• A Study on the Exchange Coupling of Co/NiMn System (第4回アジア情報記録技術シンポジウム〔英文〕)
• MR Characteristics of Al2O3 Based Magnetic Tunneling Junction (第4回アジア情報記録技術シンポジウム〔英文〕)
• A Study on the Exchange Coupling of Co/NiMn system
• MR Characteristics of Al_2O_3 Based Magnetic tunneling Junction
• Electrical Stress Effect on Poly-Si Thin Film Transistors Fabricated by Metal Induced Lateral Crystallization
• High-Performance Low-Temperature Poly-Silicon Thin Film Transistors Fabricated by New Metal-Induced Lateral Crystallizatiorn Process
• Plasma-Assisted Atomic Layer Growth of High-Quality Aluminum Oxide Thin Films
• Effects of tilt-cut Si substrates on crystal structure and magnetic anisotropy of metallic ferromagnetic thin films
• Enhanced Fatigue and Data Retention Characteristics of Pb(Zr, Ti)O_3 Thin Films by the Selectively Nucleated Lateral Crystallization Method
• Compositional variation of magnetoresistance characteristics in NiFe/Cu/Co spin valve thin films
• Enhancement of Giant Magnetoresistance by the Separation of the Permalloy Layers in Cu/NiFe Metallic Multilayer
• Enhancement of Giant Magnetoresistance by the Separation of the Permalloy Layers in Cu/NiFe Metallic Multilayer
• Novel Triode-Type Field Emission Arrays and Appropriate Driving Method for Flat Lamp Using Carbon Nanofibers Grown by Plasma Enhanced Chemical Vapor Deposition
• Effect of Base Layers beneath Ni Catalyst on the Growth of Carbon Nanofibers Using Plasma Enhanced Chemical Vapor Deposition
• Characteristics of Field Emission for Flat Lamp Using Carbon Nanofibers as a Function of Swap-Gate Driving Condition
• Perpendicular Magnetic Anisotropy and Layered Structure in Co/Pd Multilayered Thin Films
• EXAFS Study for Anharmonicity of CuBr
• Plasma-Assisted Atomic Layer Growth of High-Quality Aluminum Oxide Thin Films
• Electrical Stress Effect on Poly-Si Thin Film Transistors Fabricated by Metal Induced Lateral Crystallization
• Scanning Rapid Thermal Annealing Process for Poly Silicon Thin Film Transistor

もっと見る 閉じる

スポンサーリンク