MR Characteristics of Al2O3 Based Magnetic Tunneling Junction (第4回アジア情報記録技術シンポジウム〔英文〕)
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概要
- 論文の詳細を見る
In this paper, spin-dependent tunneling junctions, in which the tunneling barrier Al_2O_3 is formed by depositing a 1〜3nm thick Al layer, followed by thermal exidation at room temperature in an O_2 atmosphere, were fabricated on 4° tilt (111)Si substrate in 3-gun magnetron sputtering system. The top and bottom ferromagnetic electrodes were Ni_<80>Fe_<20> and Co. A maximum Tunneling MR ratio of 14% was obtained in the junction of which insulating barrier thickness was 2nm. By increasing the tunneling voltage across the junction, maximum MR ratio reduced and finally showed no MR characteristics.
- 社団法人映像情報メディア学会の論文
- 1999-11-10
著者
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Cho Y‐j
Division Of Materials Science And Engineering Seoul National University
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Cho K‐k
School Of Materials Science And Engineering Seoul National University
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Joo S‐k
Seoul National Univ. Seoul Kor
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Joo Seung-ki
School Of Material Science And Engineering Seoul-national University
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Joo Seung-ki
Division Of Materials Science And Engineering College Of Engineering Seoul National University
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Joo Seung-ki
Division Of Materials Science And Engineering Seoul National Univ.
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Cho Yong-Jin
School of Materials Science and Engineering, Seoul National University
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Cho Kwon-Koo
School of Materials Science and Engineering, Seoul National University
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Joo Seung-ki
School Of Materials Science And Engineering College Of Enginering Seoul National University
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Joo Seung-Ki
School of Materials Science and Engineering, College of Enginering, Seoul National University
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