Magnetoresistance of ferromagnetic tunnel junctions with Al_2O_3 formed by Plasma-Assisted Atomic Layer Controlled Deposition
スポンサーリンク
概要
- 論文の詳細を見る
In spin-dependent tunneling junctions, Al_2O_3 tunnel barriers have been grown by plasma-assisted atomic layer controlled deposition (PAALD) between two ferromagnetic films. Al was deposited on the bottom ferromagnetic electrodes (Co) by PAALD method, in which DMEAA (Dimethylethylamine alane) was used as a source gas. And then Al_2O_3 barriers formed through oxidation of the Al films in a pure oxygen rf plasma. A maximum tunneling MR ratio of 25% was obtained in the junction of which insulating barrier thickness was 25 Å.
- 社団法人電子情報通信学会の論文
- 2000-11-09
著者
-
Jeong C‐w
Seoul National Univ. Seoul Kor
-
Joo S‐k
Seoul National Univ. Seoul Kor
-
Joo Seung-ki
School Of Material Science And Engineering Seoul-national University
-
Joo Seung-ki
Division Of Materials Science And Engineering College Of Engineering Seoul National University
-
Joo Seung-ki
Division Of Materials Science And Engineering Seoul National Univ.
-
Jeong Won-cheol
Division Of Materials Science And Engineering Seoul National University
-
JEONG Won-Cheol
School of Materials Science and Engineering, Seoul National University
-
Jeong Chang-Wook
School of Materials Science and Engineering, Seoul National University
-
Joo Seung-ki
School Of Materials Science And Engineering College Of Enginering Seoul National University
-
Jeong Chang-wook
School Of Materials Science & Engineering College Of Engineering Seoul National University
-
Joo Seung-Ki
School of Materials Science and Engineering, College of Enginering, Seoul National University
関連論文
- Perpendicular Magnetic Anisotropy and Layered Structure in Co/Pd Multilayered Thin Films
- Effect of Interface State on the Magnetic Properties in Co/Pd and Co/Pt Multilayered Thin Films
- Compositional variation of magnetoresistance characteristics in NiFe/Cu/Co spin valve thin films
- Effects of tilt-cut Si substrates on crystal structure and magnetic anisotropy of metallic ferromagnetic thin films
- NiFeCo/Cu/Co System for Magnetoresistive Random Access Memory (MRAM)
- NiFeCo/Cu/Co System for Magnetoresistive Random Access Memory (MRAM)
- Scanning Rapid Thermal Annealing Process for Poly Silicon Thin Film Transistor
- Characterization of magnetoresistance in ferromagnetic/oxide/ferromagnetic structured thin films
- Characterization of magnetoresistance in ferromagnetic/oxide/ferromagnetic structured thin films
- Effects of Substrate Surface Topology on NiFe/Cu/Co Spin Valve Characteristics
- A Study on the Switching Charactetistics of NiFe/Co/Cu/Co Pseudo Spin Valve MRAM Cells (第4回アジア情報記録技術シンポジウム〔英文〕)
- A Study on the Switching Characteristics of NiFe/Co/Cu/Co Pseudo Spin Valve MRAM Cells
- Structure and magnetic properties of Ni-Zn ferrite thin films prepared by RF magnetron sputtering at room temperature
- Structure and magnetic properties of Ni-Zn ferrite thin films prepared by RF magnetron sputtering at room temperature
- Introduction of Selectively Nucleated Lateral Crystallization of Lead Zirconate Titanate Thin Films for Fabrication of High-Performance Ferroelectric Random Access Memory
- FABRICATION OF POLY-SI TFT ON THE GLASS SUBSTRATE BY METAL-INDUCED LATERAL CRYSTALLIZATION
- FABRICATION OF POLY-SI TFT ON THE GLASS SUBSTRATE BY METAL-INDUCED LATERAL CRYSTALLIZATION
- Magnetoresistance of ferromagnetic tunnel junctions with Al2O3 formed by plasma-assisted atomic layer controlled deposition (マルチメディアストレージ--第5回アジア情報記録技術シンポジウム)
- A study on the oxidation kinetics of ultrathin cobalt films (マルチメディアストレージ--第5回アジア情報記録技術シンポジウム〔英文〕)
- Magnetoresistance of ferromagnetic tunnel junctions with Al_2O_3 formed by Plasma-Assisted Atomic Layer Controlled Deposition
- A study on the oxidation kinetics of ultrathin cobalt films
- Characterization of Spin Valve Films Exchange Biased by Co/Ru/Co Synthetic Antiferromagnets Prepared on 4 Degree Tilt-Cut Si(111)Wafer (第4回アジア情報記録技術シンポジウム〔英文〕)
- Characterization of spin valve films exchange biased by Co/Ru/Co synthetic antiferromagnets prepared on 4 degree tilt-cut Si(111) wafer
- An enhanced structure for multilevel magnetoresistive random access memory(MRAM)
- An enhanced structure for multilevel magnetoresistive random access memory(MRAM)
- A New Multilayered Structure for Advanced Magnetoresistive Random Access Memory (MRAM) Applications
- A New Multilayered Structure for Advanced Magnetoresistive Random Access Memory(MRAM) Applications
- A Study on the Exchange Coupling of Co/NiMn System (第4回アジア情報記録技術シンポジウム〔英文〕)
- MR Characteristics of Al2O3 Based Magnetic Tunneling Junction (第4回アジア情報記録技術シンポジウム〔英文〕)
- A Study on the Exchange Coupling of Co/NiMn system
- MR Characteristics of Al_2O_3 Based Magnetic tunneling Junction
- Plasma-Assisted Atomic Layer Growth of High-Quality Aluminum Oxide Thin Films
- Enhanced Fatigue and Data Retention Characteristics of Pb(Zr, Ti)O_3 Thin Films by the Selectively Nucleated Lateral Crystallization Method
- Compositional variation of magnetoresistance characteristics in NiFe/Cu/Co spin valve thin films
- Enhancement of Giant Magnetoresistance by the Separation of the Permalloy Layers in Cu/NiFe Metallic Multilayer
- Enhancement of Giant Magnetoresistance by the Separation of the Permalloy Layers in Cu/NiFe Metallic Multilayer
- Novel Triode-Type Field Emission Arrays and Appropriate Driving Method for Flat Lamp Using Carbon Nanofibers Grown by Plasma Enhanced Chemical Vapor Deposition
- Effect of Base Layers beneath Ni Catalyst on the Growth of Carbon Nanofibers Using Plasma Enhanced Chemical Vapor Deposition
- Characteristics of Field Emission for Flat Lamp Using Carbon Nanofibers as a Function of Swap-Gate Driving Condition
- EXAFS Study for Anharmonicity of CuBr
- Plasma-Assisted Atomic Layer Growth of High-Quality Aluminum Oxide Thin Films
- Scanning Rapid Thermal Annealing Process for Poly Silicon Thin Film Transistor