MR Characteristics of Al_2O_3 Based Magnetic tunneling Junction

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概要

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• In this paper, spin-dependent tunneling junctions, in which the tunneling barrier Al_2O_3 is formed by depositing a 1∼3nm thick Al layer, followed by thermal oxidation at room temperature in an O_2 atmosphere, were fabricated on 4 ° tilt (111)Si substrate in 3-gun magnetron sputtering system. The top and bottom ferromagnetic electrodes were Ni_<80>Fe_<20> and Co. A maximum Tunneling MR ratio of 14% was obtained in the junction of which insulating barrier thickness was 2nm. By increasing the tunneling voltage across the junction, maximum MR ratio reduced and finally showed no MR characteristics.

• 社団法人電子情報通信学会の論文
• 1999-11-10

著者

• Cho Y‐j

  Division Of Materials Science And Engineering Seoul National University

• Cho K‐k

  School Of Materials Science And Engineering Seoul National University

• Joo S‐k

  Seoul National Univ. Seoul Kor

• Joo Seung-ki

  School Of Material Science And Engineering Seoul-national University

• Joo Seung-ki

  Division Of Materials Science And Engineering College Of Engineering Seoul National University

• Joo Seung-ki

  Division Of Materials Science And Engineering Seoul National Univ.

• Cho Yong-Jin

  School of Materials Science and Engineering, Seoul National University

• Cho Kwon-Koo

  School of Materials Science and Engineering, Seoul National University

• Joo Seung-ki

  School Of Materials Science And Engineering College Of Enginering Seoul National University

• Joo Seung-Ki

  School of Materials Science and Engineering, College of Enginering, Seoul National University

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