Magnetoresistance of ferromagnetic tunnel junctions with Al2O3 formed by plasma-assisted atomic layer controlled deposition (マルチメディアストレージ--第5回アジア情報記録技術シンポジウム)
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概要
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In spin-dependent tunneling junctions, Al_2O_3 tunnel barriers have been grown by plasma-assisted atomic layer controlled deposition(PAALD) between two ferromagnetic films. Al was deposited on the bottom ferromagnetic electrodes(Co) by PAALD method, in which DMEAA (Dimethylethylamine alane) was used as a source gas. And then, Al_2O_3 barriers formed through oxidation of the Al films in a pure oxygen rf plasma. A maximum tunneling MR ratio of 25% was obtained in the junction of which insulating barrier thickness was 25 Å.
- 社団法人映像情報メディア学会の論文
- 2000-11-16
著者
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Jeong C‐w
Seoul National Univ. Seoul Kor
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Joo S‐k
Seoul National Univ. Seoul Kor
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Joo Seung-ki
School Of Material Science And Engineering Seoul-national University
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Joo Seung-ki
Division Of Materials Science And Engineering College Of Engineering Seoul National University
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Joo Seung-ki
Division Of Materials Science And Engineering Seoul National Univ.
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Jeong Won-cheol
Division Of Materials Science And Engineering Seoul National University
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JEONG Won-Cheol
School of Materials Science and Engineering, Seoul National University
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Jeong Chang-Wook
School of Materials Science and Engineering, Seoul National University
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Joo Seung-ki
School Of Materials Science And Engineering College Of Enginering Seoul National University
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Jeong Chang-wook
School Of Materials Science & Engineering College Of Engineering Seoul National University
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Joo Seung-Ki
School of Materials Science and Engineering, College of Enginering, Seoul National University
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