Scanning Rapid Thermal Annealing Process for Poly Silicon Thin Film Transistor
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概要
- 論文の詳細を見る
Polycrystalline silicon (poly-Si) thin-film transistors (TFTs) were fabricated on transparent glass substrates using lamp-scan rapid thermal annealing. Scan-radiation-annealed silicon islands were crystallized by metal-induced lateral crystallization (MILC). The activation energy of Ni-MILC was calculated to be 1.56 eV@. In order to enhance the MILC rate, we deposited a capping SiO2 layer over the self-aligned TFT, which was found to increase the MILC rate several times. Thus fabricated TFTs exhibited different electrical characteristics depending on the annealing conditions.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2000-10-15
著者
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Yoon Yeo-geon
School Of Material Science And Engineering Seoul-national University
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Lee Byung-il
School Of Material Science And Engineering Seoul-national University
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Joo Seung-ki
School Of Material Science And Engineering Seoul-national University
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Kim Gi-bum
School Of Material Science And Engineering Seoul-national University
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Kim Chang-hoon
School Of Material Science And Engineering Seoul-national University
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Kim Chang-Hoon
School of Material Science and Engineering, Seoul National University Seoul 151-742, Korea
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Kim Tae-Kyung
School of Material Science and Engineering, Seoul National University Seoul 151-742, Korea
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Yoon Yeo-Geon
School of Material Science and Engineering, Seoul National University Seoul 151-742, Korea
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