The Loss Kinetics of Substitutional Carbon in Si1-xCx Regrown by Solid Phase Epitaxy

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概要

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• Epitaxial layers of Si1-xCx ($x=0.016$) were synthesized using ion implantation and solid phase epitaxy (SPE), and the loss kinetics of substitutional carbon was investigated. As annealing temperature and time increase, more carbon atoms were found to diffuse from substitutional to interstitial sites. The activation energy for the loss of substitutional carbon into interstitial sites was obtained over the temperature range, 700–1040°C, using both high-resolution X-ray diffraction (HR-XRD) and Fourier transform infrared spectroscopy (FTIR). Both methods yielded similar activation energies (${\sim}3$ eV) for the loss kinetics. In addition, SPE layers regrown by rapid thermal annealing (RTA) were shown to have better crystalline quality than those regrown by furnace annealing.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2001-02-15

著者

• SONG Jong

  Korea Institute of Science and Technology

• Kim Tae-joon

  School Of Materials Science And Engineering Seoul National University

• Park Byungwoo

  School Of Materials Science And Engineering College Of Engineering Seoul National University

• Kim Yong

  School Of Information And Communications Gwangju Institute Of Science And Technology (gist)

• Kim Tae-Kyung

  School of Materials Science and Engineering, Seoul National University, Seoul, Korea

• Kim Tae-Kyung

  School of Material Science and Engineering, Seoul National University Seoul 151-742, Korea

• Song Jong

  Korea Institute of Science and Technology, Seoul, Korea

• Kim Tae-Joon

  School of Materials Science and Engineering, Seoul National University, Seoul, Korea

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