Model for Dopant-Induced Enhancement in Solid-Phase Epitaxial Recrystallization of Amorphous Si

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概要

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• A model is proposed for the effect of solute atoms on the solid-phase epitaxial regrowth kinetics in amorphous Si. The enhanced growth rate with p-type or n-type solutes is explained in terms of reduction of the bond strength, caused by excess holes or electrons residing at the crystal-amorphous interface supplied from the crystalline side due to the Fermi-level shift. This makes the bond-breaking (formation) process easier at ledges along the interface during recrystallization, creating more thermally generated dangling bonds compared to the intrinsic case.

• 社団法人応用物理学会の論文
• 1996-12-01

著者

• Park Byungwoo

  School Of Materials Science And Engineering College Of Engineering Seoul National University

• Park Byungwoo

  School Of Materials Science And Engineering Georgia Institute Of Technology

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