Mixture Behavior and Microwave Dielectric Properties in the Low-fired TiO_2-CuO System

概要

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The mixture behavior and microwave dielectric properties of TiO_2 doped with CuO sintered at around 900℃ for 2h were investigated using X-ray powder diffraction and a network analyzer. Low-fired TiO_2 with 2% CuO had a quality factor of 14000, relative dielectric constant(ε_r, )of 98, and a temperature coefficient of resonant frequency(τ_f)of 374 ppm/℃. The microwave dielectric properties of low-fired, CuO doped TiO_2 could be interpreted by observing the dielectric properties of CuO: high loss tangent(tanδ), low dielectric constant, and a negative temperature coefficient of resonant frequency. The microwave dielectric properties of low-fired, CuO doped TiO_2 showed a dependence on the mixture formation of TiO_2 and CuO, More importantly, the ε_r of low-fired TiO_2 with CuO could be predicted by the logarithmic mixing model. Therefore, the variation of the microwave dielectric properties was attributed to the mixture behavior of TiO_2 and CuO.
社団法人応用物理学会の論文
2000-05-15