Study on ZrO2:Er Thin Films Fabricated by Metal-Organic Chemical Vapor Deposition
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概要
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ZrO2:Er thin films for active waveguide applications were fabricated by the metal-organic chemical vapor deposition (MOCVD) method. X-ray diffraction demonstrated that there is a rapid change of preferred orientation, from (001) to (100), in samples of which the Er contents are 2.39 mol% and 10.41 mol%, respectively. The observed phase change from monoclinic to tetragonal was attributed to the $c/a$ ratio reduction with Er ion incorporation into the ZrO2 matrix. A considerable increase in oxygen deficiency leads to the phase change, as revealed by X-ray photoelectron spectroscopy (XPS). The near-infrared photoluminescence of 4I13/2 $\rightarrow$ 4I15/2 transition was investigated and the quenching concentration for the luminescence was found to be 2.39 mol%. It was proposed that the oxygen deficiency observed at 10.41 mol% Er concentration is mainly responsible for the quenching phenomenon.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-05-15
著者
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Cho Woon
Photonics Research Center Korea Institute Of Science And Technology
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Park Jeong
School Of Materials Science And Engineering Seoul National University
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Hong Kug
School Of Material Sciences & Engineering Seoul National University
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Chung Jang-hoon
Department Of Chemistry Myongi University
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Hong Kug
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
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Park Jeong
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
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Cho Woon
Photonics Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea
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Chung Jang-Hoon
Department of Chemistry, Myongi University, Yongin, Kyunggi-do 449-728, Korea
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