Influence of Anatase–Rutile Phase Transformation on Dielectric Properties of Sol–Gel Derived TiO2 Thin Films

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概要

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• Effects of annealing temperature on the structural and dielectric properties of sol–gel derived TiO2 thin films were systematically investigated. Thin films annealed at various temperatures showed pure or mixed phases of anatase and rutile. As-deposited films started crystallization below 600°C and fully crystallized into the anatase phase at 800°C, followed by transformation to the rutile phase above 850°C. Dielectric properties of thin films with various phases were studied by LCR-meter using the metal–insulator–metal (MIM) structure. Dielectric constants of thin films increased from 40 to 147 as the portion of rutile phase increased from 0 to 95%, while dielectric losses decreased from 0.011 to 0.001. Temperature dependence of dielectric constants of thin films was also investigated. The dielectric properties of TiO2 thin films were discussed in terms of phase constitution, crystallinity, and preferred orientation.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-08-15

著者

• Jung Hyun

  School Of Materials Science And Engineering Seoul National University

• Kim Dong-wan

  School Of Material Sciences & Engineering Seoul National University

• Hong Kug

  School Of Material Sciences & Engineering Seoul National University

• Kim Jin

  School Of Biotechnology & Bioengineering Kangwon National University

• Kim Dong-Wan

  School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea

• Jung Hyun

  School of Chemistry and Molecular Engineering, Seoul National University, Seoul 151-747, Korea

• Kim Jin

  School of Advanced Materials Science and Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea

• Kim Jin

  School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea

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