Inductively Coupled Plasma Etching of Chemical-Vapor-Deposited Amorphous Carbon in N2/O2/Ar Chemistries

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概要

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• In this study, we investigated the etching characteristics and mechanism of an amorphous carbon (a-C) layer for a multi-level resist (MLR) structure. Chemical-vapor-deposited (CVD) a-C layers with a SiO2 hard-mask were etched in an inductively coupled plasma (ICP) etcher by varying the process parameters such as top electrode power, bottom electrode power, and gas flow ratio in N2/O2/Ar plasmas. The etch rate and profile angle of the CVD a-C thin films were decreased with increasing N2 flow ratio in the N2/O2/Ar plasmas. As the N2 flow ratio increased, the etch rate and the profile angle were reduced due to the enhanced formation of CNx on the etched surface. The etch rate of the CVD a-C thin films was increased with increasing the top and bottom electrode powers.

• 2009-08-25

著者

• Lee Nae-eung

  School Of Metallurgical And Materials Engineering Sungkyunkwan University

• Kim Jin

  School Of Biotechnology & Bioengineering Kangwon National University

• Park Young

  School Of Electrical And Computer Engineering Sungkyunkwan University

• Kwon Bong

  School of Advanced Materials Science and Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea

• Ahn Joung-ho

  School of Advanced Materials Science and Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea

• Lee Hag

  School of Advanced Materials Science and Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea

• Shon J.

  Jusung Engineering Co., Ltd., 49 Neungpyeong-ri, Opo-eup, Gwangju, Gyeonggi-do 464-892, Korea

• Lee Nae-Eung

  School of Advanced Materials Science and Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea

• Kim Jin

  School of Advanced Materials Science and Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea

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