Spatial Distribution of Oxide Traps in Stressed Flash Memory
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概要
- 論文の詳細を見る
From a numerical model and experiments, it is shown that oxide traps are uniformly generated by initial program/erase (P/E) stresses near the center of a tunnel oxide. Numerical simulations are performed to determine the dependence of single-trap-assisted tunneling (single-TAT) current on the spatial and energetic distribution of oxide traps. The discrete probability density of single-TAT current has a power-law tail and its slope $\beta$ is strongly related to the spatial distribution of oxide traps. We derive the analytical equation of $\beta$ as a function of the characteristic length $\lambda_{\text{t}}$ of trap distribution: $\beta=1-1/(\alpha_{\text{eff}}\lambda_{\text{t}})$; here, $\alpha_{\text{eff}}$ is the effective attenuation constant.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-06-25
著者
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Min Hong
School Of Electrical Engineering & Isrc Seoul National University
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Shim Byung
School Of Electrical Engineering And Computer Science And Nano-systems Institute (nsi-ncrc) Seoul Na
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Park Young
School Of Electrical And Computer Engineering Sungkyunkwan University
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Shim Byung
School of Electrical Engineering and Computer Science and Nano-Systems Institute (NSI-NCRC), Seoul National University, Seoul 151-744, Korea
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