An Analysis of the Field Dependence of Interface Trap Generation under Negative Bias Temperature Instability Stress using Wentzel--Kramers--Brillouin with Density Gradient Method
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概要
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In this paper, the Si--H bond dissociation rate is calculated under a negative bias temperature instability (NBTI) condition that considers the quantum effect on the hole density in the inversion layer of a metal--oxide--semiconductor field-effect transistor (MOSFET). The physical model used in this study is composed of two terms: the number of holes in that Si--H bond, and the polarization of the Si--H bond under an external electric field. By adopting a density-gradient (DG) method with a penetration boundary condition and the Wentzel--Kramers--Brillouin (WKB) approximation, the penetrated hole density profile in the gate oxide and the tendency towards the hole amount in the Si--H bond according to the electric field have been identified and compared with other works. The results show that the NBTI field dependence and the lifetime of the devices under NBTI stress correlate to the power-law dependency.
- 2011-01-25
著者
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Park Young
School Of Electrical And Computer Engineering Sungkyunkwan University
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Baek Chang-Ki
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea
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Choi SeongWook
School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-744, Korea
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Park Sooyoung
School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-744, Korea
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