A New Charge Pumping Device
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概要
- 論文の詳細を見る
A new charge pumping device using the MOS capacitor is proposed and its operational characteristics are studied by the device simulations. The device has a structure similar to a MOSFET device, which consists of a charge source region, a floating node(the output), an MOS capacitor, and two potential barriers. The charges are collected into the inversion layer of MOS capacitor from the charge source region through the modulated barrier when the gate is turned on and they are tramsterred to the floating node through the fixed barrier while the gate turns off. Through the simulations, it is shown that the new device obtains the boosted voltage by the magnitude of about 1V.
- 社団法人電子情報通信学会の論文
- 1998-07-23
著者
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Park Y
School Of Electrical Engineering & Isrc Seoul National University
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Park Young
School Of Mechanical Engineering Yonsei University
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Chung In-young
School Of Electrical Engineering & Isrc Seoul National University
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Min Hong
School Of Electrical Engineering And Computer Science And Isrc Seoul National University
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Min Hong
School Of Electrical Engineering & Isrc Seoul National University
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Park Young
School Of Electrical Engineering And Computer Science And Inter-university Of Semiconductor Research
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Park Young
School Of Electrical Engineering & Isrc Seoul National University
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Park Young
School Of Electrical And Computer Engineering Sungkyunkwan University
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