Min Hong | School Of Electrical Engineering & Isrc Seoul National University
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概要
関連著者
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Min Hong
School Of Electrical Engineering & Isrc Seoul National University
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Park Young
School Of Electrical And Computer Engineering Sungkyunkwan University
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Min Hong
School Of Electrical Engineering And Computer Science And Isrc Seoul National University
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Park Young
School Of Electrical Engineering And Computer Science And Inter-university Of Semiconductor Research
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Park Young
School Of Electrical Engineering & Isrc Seoul National University
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Park Young
School Of Mechanical Engineering Yonsei University
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Lee Joo-hyoung
Memory R&d Division Hynix Semiconductor Co.
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Lee J‐h
Lg Electronics Inst. Technol. Seoul Kor
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Lee J‐h
Wonkwang Univ. Chonpuk Kor
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Park Young
Department Of Electronics Engineering And Inter University Semiconductor Research Center Seoul Natio
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Lee Hyeokjae
School Of Electrical Engineering Kookmin University
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Lee Ju-Hyeon
School of Electrical Engineering, Wonkwang University
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Park Y
School Of Electrical Engineering & Isrc Seoul National University
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Lee Jong-ho
School Of Electrical Engineering Wonkwang University
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KIM Bomsoo
Korea Institute for Advanced Study
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Chung In-young
School Of Electrical Engineering & Isrc Seoul National University
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BAEK Chang-Ki
School of Electrical Engineering and Computer Science and Nano-Systems Institute (NSI-NCRC), Seoul N
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Shim Byung
School Of Electrical Engineering And Computer Science And Nano-systems Institute (nsi-ncrc) Seoul Na
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Lee Jong-ho
School Of Eecs Engineering Kyungpook National University
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Lee Jong-Ho
School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea
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QUAN Wu-yun
Korea institute for Advanced Study
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LEE Jong
School of Electrical Engineering, Seoul National University
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Lee Jong
School Of Adv. Mat. Sci. & Eng. Sungkyunkwan Univ.
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Kim Dae
Korea Atomic Energy Research Institute
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Chun Kwun-soo
School Of Electrical Engineering And Computer Science Seoul National University
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Park Young-june
School Of Electrical Engineering And Isrc Seoul National University
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KWON Wookhyun
Korea Institute for Advanced Study
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SONG Yunheub
Memory Division, Semiconductor Business, Samsung Electronics Company, Ltd.
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Quan Wu-yun
Institute Of Microelectronics Fudan University
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Min Hong
School Of Electrical Engineering And Computer Science And Nano-systems Institute (nsi-ncrc) Seoul Na
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Park Young
School Of Electrical Engineering And Computer Science And Nano-systems Institute (nsi-ncrc) Seoul Na
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Quan Wu-yun
Institute of Microelectronics, Fudan University, 220 Handan Road, Shanghai 200433, China
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Baek Chang-Ki
School of Electrical Engineering and Computer Science and Nano-Systems Institute (NSI-NCRC), Seoul National University, Seoul 151-744, Korea
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Baek Chang-Ki
School of Electrical Engineering and Computer Science, and ISRC, Seoul National University, P.O. Box 34 Kwanak, Seoul 151-744, Korea
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Song Yunheub
Memory Division, Semiconductor Business, Samsung Electronics Company, Ltd., Kyungki-Do 449-900, Korea
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Park Young
School of Electrical Engineering and Computer Science, and ISRC, Seoul National University, P.O. Box 34 Kwanak, Seoul 151-744, Korea
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Min Hong
School of Electrical Engineering and Computer Science and Nano-Systems Institute (NSI-NCRC), Seoul National University, Seoul 151-744, Korea
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Min Hong
School of Electrical Engineering and Computer Science, and ISRC, Seoul National University, P.O. Box 34 Kwanak, Seoul 151-744, Korea
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Kim Bomsoo
Korea Institute for Advanced Study, 207-43 Cheongryangri, Seoul, Korea
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Kwon Wookhyun
Korea Institute for Advanced Study, 207-43 Cheongryangri, Seoul, Korea
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Shim Byung
School of Electrical Engineering and Computer Science and Nano-Systems Institute (NSI-NCRC), Seoul National University, Seoul 151-744, Korea
著作論文
- Time-Varying Body Instability and Low-Frequency Noise Characteristics of Mini-Field-Dual-Body Silicon-on-Insulator Structure for Analog-Digital Mixed-Mode Circuits
- Anomalous Noise Degradation Caused by Device Size Effects in SOI MOSFETs
- AC Floating Body Effects and 1/f Noise Characteristics of Dual Body SOI Structure for Analog-Digital Mixed Mode Circuit
- A New Charge Pumping Device
- A New Charge Pumping Device
- Spatial Distribution of Oxide Traps in Stressed Flash Memory
- Design Technique for Ramped Gate Soft-Programming in Over-Erased NOR Type Flash EEPROM Cells
- High Speed, Low Power Programming in 0.17μm Channel Length NOR-type Floating Gate Flash Memory Cell Free of Drain Turn-On Effects
- Spatial Distribution of Oxide Traps in Stressed Flash Memory