Kim Dae | Korea Atomic Energy Research Institute
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概要
関連著者
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Kim Dae
Korea Atomic Energy Research Institute
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KIM Dae
Korea institute for Advanced Study
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BAEK Chang-Ki
Korea Institute for Advanced Study
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KIM Bomsoo
Korea Institute for Advanced Study
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QUAN Wu-yun
Korea institute for Advanced Study
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Kim Dae
Magnachip Semiconductor Inc.
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Kwon Wookhyun
Memory Division Semiconductor Business Samsung Electronics Company Ltd.
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KIM Bomsoo
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology
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Kim D
Korea Institute For Advanced Study
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Kim Dae-byung
Dept. Of Materials Engineering Korea University Of Technology And Education
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Jeong Yoon-ha
Department Of Electrical And Electronic Engineering Pohang University Of Science And Technology
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Jeong Yoon-Ha
Department of Creative IT Excellence Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk 790-784, Republic of Korea
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SONG Kee
Korea Atomic Energy Research Institute
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KIM Youn-Jang
Hyundai Electronics Co., Ltd.
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Han In-Shik
Dept. of Electronics Engineering, Chungnam National University
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GOO Tae-Gyu
Dept. of Electronics Engineering, Chungnam National University
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LEE Heui-Seung
Magnachip Semiconductor Inc.
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LEE Hi-Deok
Department of Electronics Engineering, Chungnam National University
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Lee H‐j
Dept. Of Electronics Engineering Chungnam National University
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Lee Hi-deok
R&d Division Lg Semicon Co. Ltd.
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Lee Hi-deok
Department Of Electronics Engineering Chungnam National University
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Lee H‐j
Magnachip Semiconductor Inc.
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Kim Y‐j
Yonsei Univ. Seoul Kor
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Jeong Y‐h
Pohang Univ. Sci. And Technol. Kyungpook Kor
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Kim Kinam
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Kim Kinam
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim Kinam
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.
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Park Chan-kwang
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Han In-shik
Dept. Of Electronics Engineering Chungnam National University
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Han Jee
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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HAN Jung
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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LEE Heon
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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SIM Sang-Pil
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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KWON Wook
Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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LEE Wook
Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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JUNG Cheol
Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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JANG Young
Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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PARK Jeung
Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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Han Jung
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kwon Wook
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Jung Cheol
Advanced Technology Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Park Jeung
Advanced Technology Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Sim Sang-pil
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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JEONG Yoon-Ha
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology
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SON Younghwan
Department of Electronics Engineering, Chungnam National University
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HAN In-Shik
Department of Electronics Engineering, Chungnam National University
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GOO Tae-Gyu
Department of Electronics Engineering, Chungnam National University
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Kwon Wook-hyun
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Jeong Yoon-ha
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology
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Lee H‐d
Chungnam National Univ. Taejon Kor
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Han In-shik
Department Of Electronics Engineering Chungnam National University
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Min Hong
School Of Electrical Engineering & Isrc Seoul National University
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Lee Heon
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Song Yunheub
Department Of Electronics Engineering Chungnam National University
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BAEK Chang-Ki
School of Electrical Engineering and Computer Science and Nano-Systems Institute (NSI-NCRC), Seoul N
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SONG Yunheub
Memory Division, Semiconductor Business, Samsung Electronics Company, Ltd.
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LEE Jawoong
Korea Institute for Advanced Study
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Yoon Kyung
Korea Atomic Energy Research Institute
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Son Younghwan
Department Of Electronics Engineering Chungnam National University
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Kim Youn-jang
Hyundai Electronics Co. Ltd.
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Goo Tae-gyu
Dept. Of Electronics Engineering Chungnam National University
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Jang Young
Advanced Technology Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Wook
Advanced Technology Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Park Young
School Of Electrical And Computer Engineering Sungkyunkwan University
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Baek Chang-Ki
School of Electrical Engineering and Computer Science, and ISRC, Seoul National University, P.O. Box 34 Kwanak, Seoul 151-744, Korea
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Baek Chang-Ki
Korea Institute for Advanced Study, 207-43 Cheongryangri, Seoul, Korea
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Jeong Yoon-Ha
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology, San 31, Hyojadong, Namgu, Pohang, 790-784, Korea
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Song Yunheub
Memory Division, Semiconductor Business, Samsung Electronics Company, Ltd., Kyungki-Do 449-900, Korea
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Park Young
School of Electrical Engineering and Computer Science, and ISRC, Seoul National University, P.O. Box 34 Kwanak, Seoul 151-744, Korea
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Min Hong
School of Electrical Engineering and Computer Science, and ISRC, Seoul National University, P.O. Box 34 Kwanak, Seoul 151-744, Korea
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Kwon Wook
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi-do 446-711, Korea
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Kim Bomsoo
Korea Institute for Advanced Study, 207-43 Cheongryangri, Seoul, Korea
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Kim Bomsoo
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology, San 31, Hyojadong, Namgu, Pohang, 790-784, Korea
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Park Chan-Kwang
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Korea
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Kim Dae
Korea Institute for Advanced Study, 207-43 Cheongryangri, Seoul, Korea
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Kwon Wookhyun
Memory Division, Semiconductor Business, Samsung Electronics Company, Ltd., Kyungki-Do, 449-900, Korea
著作論文
- A New Quantum Effect in Metal-Oxide-Semiconductor Field-Effect Transistor : Threshold Voltage Creep with Gate Voltage
- Highly Reliable 256Mb NOR Flash MLC with Self-Aligned Process and Controlled Edge Profile
- Near Surface Oxide Trap Density Profiling in NO and Remote Plasma Nitrided Oxides in Nano-Scale MOSFETs, Using Multi-Temperature Charge Pumping Technique : N_ vs. Oxide Processing
- Simple Experimental Determination of the Spread of Trapped Hot Holes Injected in Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Cells : Optimized Erase and Cell Shrinkage
- ICONE11-36500 SHAPE OPTIMIZATION OF SPACER GRID SPRINGS TO SUPPORT NUCLEAR FUEL RODS
- Spatial and Temporal Characterization of Programming Charge in SONOS Memory Cell: Effects of Localized Electron Trapping
- High Speed, Low Power Programming in 0.17μm Channel Length NOR-type Floating Gate Flash Memory Cell Free of Drain Turn-On Effects