KIM Dae | Korea institute for Advanced Study
スポンサーリンク
概要
関連著者
-
KIM Dae
Korea institute for Advanced Study
-
Kim Dae
Korea Atomic Energy Research Institute
-
BAEK Chang-Ki
Korea Institute for Advanced Study
-
Kim D
Korea Institute For Advanced Study
-
KIM Bomsoo
Korea Institute for Advanced Study
-
QUAN Wu-yun
Korea institute for Advanced Study
-
Jeong Y‐h
Pohang Univ. Sci. And Technol. Kyungpook Kor
-
JEONG Yoon-Ha
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology
-
Kim Dae
Magnachip Semiconductor Inc.
-
Kwon Wookhyun
Memory Division Semiconductor Business Samsung Electronics Company Ltd.
-
KIM Bomsoo
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology
-
Kim Dae-byung
Dept. Of Materials Engineering Korea University Of Technology And Education
-
SONG Kee
Korea Atomic Energy Research Institute
-
KIM Youn-Jang
Hyundai Electronics Co., Ltd.
-
Han In-Shik
Dept. of Electronics Engineering, Chungnam National University
-
GOO Tae-Gyu
Dept. of Electronics Engineering, Chungnam National University
-
LEE Heui-Seung
Magnachip Semiconductor Inc.
-
LEE Hi-Deok
Department of Electronics Engineering, Chungnam National University
-
Lee H‐j
Dept. Of Electronics Engineering Chungnam National University
-
Lee Hi-deok
R&d Division Lg Semicon Co. Ltd.
-
Lee Hi-deok
Department Of Electronics Engineering Chungnam National University
-
Lee H‐j
Magnachip Semiconductor Inc.
-
Kim Y‐j
Yonsei Univ. Seoul Kor
-
Kim Kinam
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
-
Kim Kinam
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
Kim Kinam
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.
-
Park Chan-kwang
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
Han In-shik
Dept. Of Electronics Engineering Chungnam National University
-
Park Young
School Of Mechanical Engineering Yonsei University
-
Han Jee
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
HAN Jung
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., LTD.
-
LEE Heon
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., LTD.
-
SIM Sang-Pil
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., LTD.
-
KWON Wook
Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.
-
LEE Wook
Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.
-
JUNG Cheol
Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.
-
JANG Young
Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.
-
PARK Jeung
Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.
-
Han Jung
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
Kwon Wook
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
Jung Cheol
Advanced Technology Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
Park Jeung
Advanced Technology Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
Sim Sang-pil
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
SON Younghwan
Department of Electronics Engineering, Chungnam National University
-
HAN In-Shik
Department of Electronics Engineering, Chungnam National University
-
GOO Tae-Gyu
Department of Electronics Engineering, Chungnam National University
-
Kwon Wook-hyun
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
Jeong Yoon-ha
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology
-
Park Y
School Of Electrical Engineering And Computer Science And Isrc Seoul National University
-
Lee H‐d
Chungnam National Univ. Taejon Kor
-
Han In-shik
Department Of Electronics Engineering Chungnam National University
-
Min Hong
School Of Electrical Engineering And Computer Science And Isrc Seoul National University
-
Lee Heon
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
Song Yunheub
Department Of Electronics Engineering Chungnam National University
-
BAEK Chang-Ki
School of Electrical Engineering and Computer Science and Nano-Systems Institute (NSI-NCRC), Seoul N
-
SONG Yunheub
Memory Division, Semiconductor Business, Samsung Electronics Company, Ltd.
-
LEE Jawoong
Korea Institute for Advanced Study
-
Yoon Kyung
Korea Atomic Energy Research Institute
-
Son Younghwan
Department Of Electronics Engineering Chungnam National University
-
Jeong Yoon-ha
Department Of Electrical And Electronic Engineering Pohang University Of Science And Technology
-
Kim Youn-jang
Hyundai Electronics Co. Ltd.
-
Goo Tae-gyu
Dept. Of Electronics Engineering Chungnam National University
-
Jang Young
Advanced Technology Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
Lee Wook
Advanced Technology Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
Kwon Wook
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi-do 446-711, Korea
-
Park Chan-Kwang
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Korea
-
Jeong Yoon-Ha
Department of Creative IT Excellence Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk 790-784, Republic of Korea
著作論文
- A New Quantum Effect in Metal-Oxide-Semiconductor Field-Effect Transistor : Threshold Voltage Creep with Gate Voltage
- Highly Reliable 256Mb NOR Flash MLC with Self-Aligned Process and Controlled Edge Profile
- Near Surface Oxide Trap Density Profiling in NO and Remote Plasma Nitrided Oxides in Nano-Scale MOSFETs, Using Multi-Temperature Charge Pumping Technique : N_ vs. Oxide Processing
- High Speed, Low Power Programming in 0.17μm Channel Length NOR-type Floating Gate Flash Memory Cell Free of Drain Turn-On Effects
- Simple Experimental Determination of the Spread of Trapped Hot Holes Injected in Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Cells : Optimized Erase and Cell Shrinkage
- Spatial and Temporal Characterization of Programming Charge in SONOS Memory Cell : Effects of Localized Electron Trapping
- ICONE11-36500 SHAPE OPTIMIZATION OF SPACER GRID SPRINGS TO SUPPORT NUCLEAR FUEL RODS