Kim Kinam | Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.

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概要

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著作論文

High Density and Ultra-Low Power Mobile SRAM Using the Novel Double S^3 (Stacked Single-crystal Silicon) Technology and KrF lithography
Tunnel Oxide Optimization to Improve Post-Cycling Retention of Flash Memories
Highly Reliable 256Mb NOR Flash MLC with Self-Aligned Process and Controlled Edge Profile
Optimization of Ring Type Electrode Process for High Density PRAM
High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors(Plenary Session,AWAD2006)
High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors(Plenary Session,AWAD2006)
Robust 2-D Stack Capacitor Technologies for 64Mb 1T1C FRAM
Robust 3-Metallization BEOL Process for 0.18μm Embedded FRAM
Invited Integration Technologies for High Density Emerging New Memories (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
Invited Integration Technologies for High Density Emerging New Memories (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
Highly Manufacturable 64M bit Ultra Low Power SRAM Using a Novel 3-Dimensional S^3 (Stacked Single-crystal Si) Cell Technology
Robust Two-Dimensional Stack Capacitor Technologies for 64 Mbit One-Transistor–One-Capacitor Ferroelectric Random Access Memory
Ring Contact Electrode Process for High Density Phase Change Random Access Memory
Highly Reliable Ring-Type Contact for High-Density Phase Change Memory
MRAM's future prospects and its challenges
High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors
Ge2Sb2Te5 Confined Structures and Integration of 64 Mb Phase-Change Random Access Memory
Invited The prospective on New Emerging Memories (FRAM, MRAM, PRAM) in nano era (先端デバイスの基礎と応用に関するアジアワークショップ)
[Invited] The Prospective on New Emerging Memories (FRAM, MRAM, PRAM) in nano era (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
Robust Three-Metallization Back End of Line Process for 0.18 μm Embedded Ferroelectric Random Access Memory
Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device
Current Development Status and Future Challenges of Ferroelectric Random Access Memory Technologies

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