Highly Manufacturable 64M bit Ultra Low Power SRAM Using a Novel 3-Dimensional S^3 (Stacked Single-crystal Si) Cell Technology
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Kim J.
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim Kinam
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Kim Kinam
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.
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Kim S.
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Choi B.
Advanced Technology Development Team Semiconductor R&d Center Memory Division Samsung Electronic
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Jung S.
Advanced Technology Development Team Semiconductor R&d Center Memory Division Samsung Electronic
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KANG Y.
Advanced Technology Team 2, Semiconductor R&D center, Samsung Electronics Co. LTD.
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JUNG W.
Advanced Technology Team 2, Semiconductor R&D center, Samsung Electronics Co. LTD.
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Kim S.
Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co
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CHO W.
Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics
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LIM H.
Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics
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JANG J.
Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics
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MOON J.
Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics
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YEO C.
Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics
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KWAK K.
Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics
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HWANG B.
Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics
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NA J.
Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics
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JEONG J.
Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics
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Kim Kinam
Advanced Technology Development Team Semiconductor R&d Center Memory Division Samsung Electronic
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Kim S.
Advanced Technology Development Team Semiconductor R&d Center Memory Division Samsung Electronic
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Na J.
Advanced Technology Development Team Semiconductor R&d Center Memory Division Samsung Electronic
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Kim J.
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Kang Y.
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Y.
Advanced Technology Development Team Semiconductor R&d Center Memory Division Samsung Electronic
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Jeong J.
Advanced Technology Development Team Semiconductor R&d Center Memory Division Samsung Electronic
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Kim J.
Advanced Technology Development Team Semiconductor R&d Center Memory Division Samsung Electronic
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Jang J.
Advanced Technology Development Team Semiconductor R&d Center Memory Division Samsung Electronic
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Kwak K.
Advanced Technology Development Team Semiconductor R&d Center Memory Division Samsung Electronic
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Yeo C.
Advanced Technology Development Team Semiconductor R&d Center Memory Division Samsung Electronic
関連論文
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- Robust Two-Dimensional Stack Capacitor Technologies for 64 Mbit One-Transistor–One-Capacitor Ferroelectric Random Access Memory
- Ring Contact Electrode Process for High Density Phase Change Random Access Memory
- Highly Reliable Ring-Type Contact for High-Density Phase Change Memory
- High Density FRAM Technology
- MRAM's future prospects and its challenges
- High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors
- Ge2Sb2Te5 Confined Structures and Integration of 64 Mb Phase-Change Random Access Memory
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- Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device
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