Kim Kinam | Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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概要
- 同名の論文著者
- Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electronの論文著者
関連著者
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Kim Kinam
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Kim K
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Kim Kinam
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim K.
Advanced Technology Development Semiconductor R&d Centre Samsung Electronics Co. Ltd
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Kim Kinam
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.
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Lee S
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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PARK J.
Advanced Technology Development, Semiconductor R&D Div., Samsung Electronics Co., Ltd
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Park J.
Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co
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Park J.
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Park J.
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
著作論文
- High Density and Ultra-Low Power Mobile SRAM Using the Novel Double S^3 (Stacked Single-crystal Silicon) Technology and KrF lithography
- Self-Aligned Local Channel Implantation Using Reverse Gate Pattern for Deep Submicron Dynamic Random Access Memory Cell Transistors
- Cell Transistor Design Using Self-Aligned Local Channel Implant(SALCI) for 4Gb DRAMs and Beyond
- Tunnel Oxide Optimization to Improve Post-Cycling Retention of Flash Memories
- Highly Reliable 256Mb NOR Flash MLC with Self-Aligned Process and Controlled Edge Profile
- Ge_2Sb_2Te_5 Confined Structures and Integration of 64Mb Phase-Change Random Access Memory
- Optimization of Ring Type Electrode Process for High Density PRAM
- Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device
- Robust Three-Metallization Back End of Line Process for 0.18μm Embedded Ferroelectric Random Access Memory
- Highly Reliable Ring Type Contact Scheme for High Density PRAM