JANG Nak-Won | Department of Electrical & Electronics Engineering, Korea Maritime University
スポンサーリンク
概要
関連著者
-
JANG Nak-Won
Department of Electrical & Electronics Engineering, Korea Maritime University
-
KANG Seung-Kuk
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
-
JOO Seok-Ho
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
-
Lee Sung-young
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
-
Joo S‐h
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
-
Park J‐h
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
-
Kim Kinam
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
-
Kim Kinam
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.
-
SONG Yoon-Jong
Advanced Technology Development, Semiconductor R&D Centre, Samsung Electronics Co. Ltd.
-
KIM Hyun-Ho
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
-
PARK Jung-Hoon
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
-
JOO Heung-Jin
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
-
LEE Sung-Young
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
-
Park Jung-hoon
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
-
Park June-hyoung
Center For Near-field Atom-photon Technology Seoul National University
-
Kang S‐k
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
-
Joo Heung-jin
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
-
Song Yoon-jong
Advanced Technology Development Semiconductor R&d Centre Samsung Electronics Co. Ltd.
-
Kim Hyun-ho
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
-
Jang Nak-Won
Department of Electrical & Electronics Engineering, Korea Maritime University, Busan, Korea
-
Song Yoon-Jong
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd., San #24, Nongseo-Li, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea
-
Lee Sung-Young
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd., San #24, Nongseo-Li, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea
-
Park Jung-Hoon
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Park Jung-Hoon
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd., San #24, Nongseo-Li, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea
-
Kim Kinam
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd., San #24, Nongseo-Li, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea
-
Kang Seung-Kuk
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Joo Seok-Ho
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd., San #24, Nongseo-Li, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea
-
Kim Hyun-Ho
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Kim Hyun-Ho
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd., San #24, Nongseo-Li, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea
-
Joo Heung-Jin
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
著作論文
- Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device
- Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device