Joo Heung-jin | Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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概要
- 同名の論文著者
- Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co. の論文著者
関連著者
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Kim Kinam
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.
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KANG Seung-Kuk
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
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Joo Heung-jin
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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Kim Hyun-ho
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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Kang Seung-Kuk
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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Kim Hyun-Ho
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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Joo Heung-Jin
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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Park Jung-hoon
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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Lee Sung-young
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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Jeong Hong-sik
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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Kang Young-Min
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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Park Jung-Hoon
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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Jeong Hong-Sik
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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JANG Nak-Won
Department of Electrical & Electronics Engineering, Korea Maritime University
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JOO Seok-Ho
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
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PARK Jung-Hun
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
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Rhie Hyoung-seub
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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Koo Bon-jae
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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Choi Do-hyun
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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Song Yoon-jong
Advanced Technology Development Semiconductor R&d Centre Samsung Electronics Co. Ltd.
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Jang Nak-Won
Department of Electrical & Electronics Engineering, Korea Maritime University, Busan, Korea
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Hong Young-Ki
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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Jung Ju-Young
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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Kim Hwi-San
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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Choi Do-Yeon
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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Kim Jai-Hyun
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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Lee Eun-Sun
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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Jung Dong-Jin
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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Lee Sung-Yung
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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Kim Hwi-San
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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Lee Eun-Sun
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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Lee Sung-Yung
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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Koo Bon-Jae
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea
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Choi Do-Hyun
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea
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Jung Dong-Jin
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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Song Yoon-Jong
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd., San #24, Nongseo-Li, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea
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Jung Ju-Young
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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Kim Jai-Hyun
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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Lee Sung-Young
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea
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Lee Sung-Young
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd., San #24, Nongseo-Li, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea
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Choi Do-Yeon
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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Park Jung-Hun
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea
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Park Jung-Hoon
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd., San #24, Nongseo-Li, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea
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Kim Kinam
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea
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Kim Kinam
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
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Kim Kinam
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd., San #24, Nongseo-Li, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea
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Kang Seung-Kuk
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea
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Joo Seok-Ho
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd., San #24, Nongseo-Li, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea
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Jeong Hong-Sik
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea
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Kim Hyun-Ho
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea
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Kim Hyun-Ho
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd., San #24, Nongseo-Li, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea
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Joo Heung-Jin
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea
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Rhie Hyoung-Seub
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea
著作論文
- Robust Two-Dimensional Stack Capacitor Technologies for 64 Mbit One-Transistor–One-Capacitor Ferroelectric Random Access Memory
- Robust Three-Metallization Back End of Line Process for 0.18 μm Embedded Ferroelectric Random Access Memory
- Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device