Robust Two-Dimensional Stack Capacitor Technologies for 64 Mbit One-Transistor–One-Capacitor Ferroelectric Random Access Memory
スポンサーリンク
概要
- 論文の詳細を見る
It is very important to develop capacitor module technologies such as robust Pb(ZrxTi1-x)O3 (PZT) film technology at nm scaled PZT thickness and damage minimized ferroelectric capacitor etching technology are crucial for the success of high density one-transistor–one-capacitor (1T1C) ferroelectric random access memory (FRAM). We resolved this issue from the change of the capacitor etching system and optimization of the PZT/SrRuO3 (SRO) deposition process. As a result, we realized a highly reliable sensing window for 64 Mbit 1T1C FRAM that were realized by novel technologies such as robust MOCVD PZT deposition technologies, optimized SRO electrode and damage minimized ferroelectric capacitor etching technologies.
- 2007-04-30
著者
-
Kim Kinam
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.
-
KANG Seung-Kuk
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
-
Park Jung-hoon
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
-
Jeong Hong-sik
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
-
Joo Heung-jin
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
-
Kim Hyun-ho
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
-
Hong Young-Ki
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Kang Young-Min
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Jung Ju-Young
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Kim Hwi-San
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Choi Do-Yeon
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Kim Jai-Hyun
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Lee Eun-Sun
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Jung Dong-Jin
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Lee Sung-Yung
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Kim Hwi-San
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Lee Eun-Sun
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Lee Sung-Yung
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Jung Dong-Jin
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Jung Ju-Young
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Kim Jai-Hyun
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Choi Do-Yeon
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Park Jung-Hoon
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Kim Kinam
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Kang Seung-Kuk
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Jeong Hong-Sik
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Kim Hyun-Ho
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
-
Joo Heung-Jin
Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-Si, Kyungki-Do 446-711, Korea
関連論文
- High Density and Ultra-Low Power Mobile SRAM Using the Novel Double S^3 (Stacked Single-crystal Silicon) Technology and KrF lithography
- Tunnel Oxide Optimization to Improve Post-Cycling Retention of Flash Memories
- Highly Reliable 256Mb NOR Flash MLC with Self-Aligned Process and Controlled Edge Profile
- Optimization of Ring Type Electrode Process for High Density PRAM
- Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device
- Robust Three-Metallization Back End of Line Process for 0.18μm Embedded Ferroelectric Random Access Memory
- High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors(Plenary Session,AWAD2006)
- High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors(Plenary Session,AWAD2006)
- Robust 2-D Stack Capacitor Technologies for 64Mb 1T1C FRAM
- Robust 3-Metallization BEOL Process for 0.18μm Embedded FRAM
- Invited Integration Technologies for High Density Emerging New Memories (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Invited Integration Technologies for High Density Emerging New Memories (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Highly Manufacturable 64M bit Ultra Low Power SRAM Using a Novel 3-Dimensional S^3 (Stacked Single-crystal Si) Cell Technology
- Robust Two-Dimensional Stack Capacitor Technologies for 64 Mbit One-Transistor–One-Capacitor Ferroelectric Random Access Memory
- Ring Contact Electrode Process for High Density Phase Change Random Access Memory
- Highly Reliable Ring-Type Contact for High-Density Phase Change Memory
- MRAM's future prospects and its challenges
- High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors
- Ge2Sb2Te5 Confined Structures and Integration of 64 Mb Phase-Change Random Access Memory
- Invited The prospective on New Emerging Memories (FRAM, MRAM, PRAM) in nano era (先端デバイスの基礎と応用に関するアジアワークショップ)
- [Invited] The Prospective on New Emerging Memories (FRAM, MRAM, PRAM) in nano era (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- Robust Three-Metallization Back End of Line Process for 0.18 μm Embedded Ferroelectric Random Access Memory
- Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device
- Current Development Status and Future Challenges of Ferroelectric Random Access Memory Technologies