Invited Integration Technologies for High Density Emerging New Memories (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
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概要
- 論文の詳細を見る
Ferroelectric RAM (FRAM) and phase-change RAM (PRAM) have been recently focused as a candidates for ideal memory which can solve the problems of conventional memories. The major obstacles for the realization of FRAM and PRAM are the cell size and density. The process technologies for the integration of high density emerging new memories (FRAM and PRAM) will be reviewed.
- 社団法人電子情報通信学会の論文
- 2005-06-21
著者
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Kim Kinam
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Kim Kinam
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.
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Jeong Hongsik
Advanced Technology Development, Semiconductor R&D Div.
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Jeong Gitae
Advanced Technology Development, Semiconductor R&D Div.
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Jeong Gitae
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.
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Jeong Hongsik
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.
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Lee Sungyung
Advanced Technology Development 2, Memory Device Business, Samsung Electronics Co.
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Lee Sungyung
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.
関連論文
- High Density and Ultra-Low Power Mobile SRAM Using the Novel Double S^3 (Stacked Single-crystal Silicon) Technology and KrF lithography
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- Cell Transistor Design Using Self-Aligned Local Channel Implant(SALCI) for 4Gb DRAMs and Beyond
- Tunnel Oxide Optimization to Improve Post-Cycling Retention of Flash Memories
- Highly Reliable 256Mb NOR Flash MLC with Self-Aligned Process and Controlled Edge Profile
- Ge_2Sb_2Te_5 Confined Structures and Integration of 64Mb Phase-Change Random Access Memory
- Optimization of Ring Type Electrode Process for High Density PRAM
- Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device
- Robust Three-Metallization Back End of Line Process for 0.18μm Embedded Ferroelectric Random Access Memory
- High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors(Plenary Session,AWAD2006)
- High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors(Plenary Session,AWAD2006)
- Invited Issues for high density MRAM (先端デバイスの基礎と応用に関するアジアワークショップ)
- [Invited] Issues for high density MRAM (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- Highly Reliable Ring Type Contact Scheme for High Density PRAM
- Robust 2-D Stack Capacitor Technologies for 64Mb 1T1C FRAM
- GST Confined Structure and Integration of 64Mb PRAM
- Robust 3-Metallization BEOL Process for 0.18μm Embedded FRAM
- Integration and Electrical Properties of Novel Ferroelectric Capacitors for 0.25μm 1 Transistor 1 Capacitor Ferroelectric Random Access Memory (1T1C FRAM)
- Novel Capacitor Technology for Sub-Quarter Micron 1T1C FRAM
- Invited Integration Technologies for High Density Emerging New Memories (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Invited Integration Technologies for High Density Emerging New Memories (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Highly Manufacturable 64M bit Ultra Low Power SRAM Using a Novel 3-Dimensional S^3 (Stacked Single-crystal Si) Cell Technology
- Robust Two-Dimensional Stack Capacitor Technologies for 64 Mbit One-Transistor–One-Capacitor Ferroelectric Random Access Memory
- Ring Contact Electrode Process for High Density Phase Change Random Access Memory
- Highly Reliable Ring-Type Contact for High-Density Phase Change Memory
- High Density FRAM Technology
- MRAM's future prospects and its challenges
- High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors
- Ge2Sb2Te5 Confined Structures and Integration of 64 Mb Phase-Change Random Access Memory
- Invited The prospective on New Emerging Memories (FRAM, MRAM, PRAM) in nano era (先端デバイスの基礎と応用に関するアジアワークショップ)
- [Invited] The Prospective on New Emerging Memories (FRAM, MRAM, PRAM) in nano era (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- Robust Three-Metallization Back End of Line Process for 0.18 μm Embedded Ferroelectric Random Access Memory
- Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device
- Current Development Status and Future Challenges of Ferroelectric Random Access Memory Technologies