Invited Issues for high density MRAM (先端デバイスの基礎と応用に関するアジアワークショップ)
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概要
- 論文の詳細を見る
Key attributes of MRAM technology are known as non-volatility with high speed and density, radiation hardness, unlimited endurance. A lot of results have been announced for commercial market. And it is anticipated that MRAM will play an important role in future memory market through its unique, functional advantages. For high density MRAM as a standalone memory, several issues related with MRAM core cells should be preferentially solved. The topic will cover basic issues of sub-micron MRAM core cell and consider the work related to the MRAM issues, such as cell stability and switching process.
- 社団法人電子情報通信学会の論文
- 2003-06-25
著者
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KIM Ki-Nam
Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics
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Kim Y
Samsung Advanced Institute Of Technology Storage Lab
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Kim Ki-nam
Advanced Technology Development Semiconductor R & D Div.
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Kim Yongsoo
Samsung Advanced Institute Of Technology Storage Lab
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Kim Eunsik
Samsung Advanced Institute Of Technology Storage Lab
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Park Sangjin
Samsung Advanced Institute Of Technology Md Lab
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Kim Taewan
Samsung Advanced Institute of Technology, MD Lab
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PARK Wanjun
Samsung Advanced Institute of Technology, MD Lab
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SONG I-Hun
Samsung Advanced Institute of Technology, MD Lab
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Lee Jangeun
Process Development teamt, Semiconductor R&D Div.
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Jeong Hongsik
Advanced Technology Development, Semiconductor R&D Div.
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Jeong Gitae
Advanced Technology Development, Semiconductor R&D Div.
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Koh Gwanhyeob
Advanced Technology Development, Semiconductor R&D Div.
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Song I-hun
Samsung Advanced Institute Of Technology Md Lab
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Kim Taewan
Samsung Advanced Institute Of Technology Md Lab
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Kim Taewan
Samsung Advanced Institute Of Technology Materials & Devices Lab.
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Park Wanjun
Samsung Advanced Institute Of Technology Md Lab
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Park Wanjun
Samsung Advanced Institute Of Technology
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Lee Jangeun
Process Development Team Semiconductor R & D Div.
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Jeong Gitae
Advanced Technology Development Semiconductor R & D Div.
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Jeong Gitae
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.
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Koh Gwanhyeob
Advanced Technology Development Semiconductor R & D Div.
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Jeong Hongsik
Advanced Technology Development Semiconductor R & D Div.
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Jeong Hongsik
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.
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Jeong Gitae
Samsung Advanced Institute of Technology, MD Lab
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Koh Gwanhyeob
Samsung Advanced Institute of Technology, MD Lab
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- MRAM's future prospects and its challenges
- High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors
- Recent Issues for High Density MRAM