[Invited] Issues for high density MRAM (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))

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概要

• 論文の詳細を見る

• Key attributes of MRAM technology are known as non-volatility with high speed and density, radiation hardness, unlimited endurance. A lot of results have been announced for commercial market. And it is anticipated that MRAM will play an important role in future memory market through its unique, functional advantages. For high density MRAM as a standalone memory, several issues related with MRAM core cells should be preferentially solved. The topic will cover basic issues of sub-micron MRAM core cell and consider the work related to the MRAM issues, such as cell stability and switching process.

• 社団法人電子情報通信学会の論文
• 2003-06-25

著者

• KIM Ki-Nam

  Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics

• Kim Y

  Samsung Advanced Institute Of Technology Storage Lab

• Kim Ki-nam

  Advanced Technology Development Semiconductor R & D Div.

• Kim Yongsoo

  Samsung Advanced Institute Of Technology Storage Lab

• Kim Eunsik

  Samsung Advanced Institute Of Technology Storage Lab

• Park Sangjin

  Samsung Advanced Institute Of Technology Md Lab

• Kim Taewan

  Samsung Advanced Institute of Technology, MD Lab

• PARK Wanjun

  Samsung Advanced Institute of Technology, MD Lab

• SONG I-Hun

  Samsung Advanced Institute of Technology, MD Lab

• Lee Jangeun

  Process Development teamt, Semiconductor R&D Div.

• Jeong Hongsik

  Advanced Technology Development, Semiconductor R&D Div.

• Jeong Gitae

  Advanced Technology Development, Semiconductor R&D Div.

• Koh Gwanhyeob

  Advanced Technology Development, Semiconductor R&D Div.

• Song I-hun

  Samsung Advanced Institute Of Technology Md Lab

• Kim Taewan

  Samsung Advanced Institute Of Technology Md Lab

• Kim Taewan

  Samsung Advanced Institute Of Technology Materials & Devices Lab.

• Park Wanjun

  Samsung Advanced Institute Of Technology Md Lab

• Park Wanjun

  Samsung Advanced Institute Of Technology

• Lee Jangeun

  Process Development Team Semiconductor R & D Div.

• Jeong Gitae

  Advanced Technology Development Semiconductor R & D Div.

• Jeong Gitae

  Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.

• Koh Gwanhyeob

  Advanced Technology Development Semiconductor R & D Div.

• Jeong Hongsik

  Advanced Technology Development Semiconductor R & D Div.

• Jeong Hongsik

  Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.

• Song I-Hum

  Samsung Advanced Institute of Technology, MD Lab

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• Programming Characteristics of Phase Change Random Access Memory Using Phase Change Simulations
• The Effect of Al/Pt Interface Reaction on Lead-zirconate-titanate Capacitor and the Optimization of Via Contact for Double Metal Ferroelectric RAM
• An Optimized Via Contact Scheme of FeRAM for Double-Level Metallization and Beyond
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• Invited Issues for high density MRAM (先端デバイスの基礎と応用に関するアジアワークショップ)
• [Invited] Issues for high density MRAM (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
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• Test of MTJ based MRAM Core Cell for A Universal Memory Application
• Test of MTJ based MRAM Core Cell for A Universal Memory Application
• Invited Integration Technologies for High Density Emerging New Memories (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
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• Involvement of Nitric Oxide and Vasoactive Intestinal Peptide in the Nonadrenergic-Noncholinergic Relaxation of the Porcine Retractor Penis Muscle
• MRAM's future prospects and its challenges
• High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors
• Recent Issues for High Density MRAM

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