High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors
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概要
- 論文の詳細を見る
- 2006-06-26
著者
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Kim Kinam
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.
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Jeong Gitae
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.
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Jeong Gitae
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co. San #24
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Kim Kinam
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co. San #24
関連論文
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- High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors(Plenary Session,AWAD2006)
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