[Invited] The Prospective on New Emerging Memories (FRAM, MRAM, PRAM) in nano era (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
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概要
- 論文の詳細を見る
- 社団法人電子情報通信学会の論文
- 2003-06-25
著者
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Kim Kinam
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.
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Kim Kinam
Advanced Technology Development Memory Device Business Samsung Electronics Co.
関連論文
- High Density and Ultra-Low Power Mobile SRAM Using the Novel Double S^3 (Stacked Single-crystal Silicon) Technology and KrF lithography
- Tunnel Oxide Optimization to Improve Post-Cycling Retention of Flash Memories
- Highly Reliable 256Mb NOR Flash MLC with Self-Aligned Process and Controlled Edge Profile
- Optimization of Ring Type Electrode Process for High Density PRAM
- High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors(Plenary Session,AWAD2006)
- High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors(Plenary Session,AWAD2006)
- Robust 2-D Stack Capacitor Technologies for 64Mb 1T1C FRAM
- Robust 3-Metallization BEOL Process for 0.18μm Embedded FRAM
- Invited Integration Technologies for High Density Emerging New Memories (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Invited Integration Technologies for High Density Emerging New Memories (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Highly Manufacturable 64M bit Ultra Low Power SRAM Using a Novel 3-Dimensional S^3 (Stacked Single-crystal Si) Cell Technology
- Robust Two-Dimensional Stack Capacitor Technologies for 64 Mbit One-Transistor–One-Capacitor Ferroelectric Random Access Memory
- Ring Contact Electrode Process for High Density Phase Change Random Access Memory
- Highly Reliable Ring-Type Contact for High-Density Phase Change Memory
- MRAM's future prospects and its challenges
- High Density (256Mb and Beyond) PRAM Integration Using 3-D Cell Array Transistors
- Ge2Sb2Te5 Confined Structures and Integration of 64 Mb Phase-Change Random Access Memory
- Invited The prospective on New Emerging Memories (FRAM, MRAM, PRAM) in nano era (先端デバイスの基礎と応用に関するアジアワークショップ)
- [Invited] The Prospective on New Emerging Memories (FRAM, MRAM, PRAM) in nano era (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- Robust Three-Metallization Back End of Line Process for 0.18 μm Embedded Ferroelectric Random Access Memory
- Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device
- Current Development Status and Future Challenges of Ferroelectric Random Access Memory Technologies