Tunnel Oxide Optimization to Improve Post-Cycling Retention of Flash Memories
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Kim Kinam
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Kim Kinam
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim Kinam
Advanced Technology Development 2 Memory Device Business Samsung Electronics Co.
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Park Chan-kwang
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Han Jee
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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KWON Wook-Hyun
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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JEE Jung
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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HAN Jung
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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LEE Heon
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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LEE Bong
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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SIM Sang-Pil
Advanced Technology Development Team2, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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Jee Jung
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Han Jung
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kwon Wook
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Sim Sang-pil
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kwon Wook-hyun
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Bong
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Heon
Advanced Technology Development Team2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Bong
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Korea
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Kwon Wook-Hyun
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Korea
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Park Chan-Kwang
Advanced Technology Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Korea
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- Tunnel Oxide Optimization to Improve Post-Cycling Retention of Flash Memories
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- Robust Two-Dimensional Stack Capacitor Technologies for 64 Mbit One-Transistor–One-Capacitor Ferroelectric Random Access Memory
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