Integration and Electrical Properties of Novel Ferroelectric Capacitors for 0.25μm 1 Transistor 1 Capacitor Ferroelectric Random Access Memory (1T1C FRAM)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-04-30
著者
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Kim Kinam
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Kim K
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Kim Kinam
Technology Develoμment Team Semiconductor R&d Center Samsung Electronics Company
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Kim Kinam
Technology Development Team Memory Device Business Samsung Electronics Co.
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Joo S
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Kim Kinam
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee S
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee K.
Technology Development Team R&d Center Memory Devices Samsung Electronics Co. Ltd.
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Song Yoon
Technology Development Team R&d Center Memory Devices Samsung Electronics Co. Ltd.
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SONG Y.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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JANG N.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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JUNG D.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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KIM H.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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JOO H.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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LEE S.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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JOO S.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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PARK S.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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Kim K.
Advanced Technology Development Semiconductor R&d Centre Samsung Electronics Co. Ltd
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Lee S.
Technical Research Laboratories Posco Korea
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Lee S.
Advanced Technology Development Semiconductor R&d Centre Samsung Electronics Co. Ltd
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Joo H.
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Jang N.
Technology Development Team R&d Center Memory Devices Samsung Electronics Co. Ltd.
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Kim Kinam
Technology Development Memory Device Business Samsung Electronics Co.
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Jung D
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Joo S.
Technology Development Team R&d Center Memory Devices Samsung Electronics Co. Ltd.
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Kim H
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Song Y.J.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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Jang N.W.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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Jung D.J.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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Song Y.J.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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Jang N.W.
Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.
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KIM H.
Technical Research Laboratory, POSCO
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