Kim Kinam | Technology Development Memory Device Business Samsung Electronics Co.

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著作論文

Reduction of Random Noise for CMOS Image Sensors with 2.2μm×2.2μm Pixel
Data Retention Characteristics of MONOS Devices with High-k Dielectrics and High-work Function Metal-gates for Multi-gigabit Flash Memory
High Density FRAM Technology
Integration and Electrical Properties of Novel Ferroelectric Capacitors for 0.25μm 1 Transistor 1 Capacitor Ferroelectric Random Access Memory (1T1C FRAM)
Novel Capacitor Technology for Sub-Quarter Micron 1T1C FRAM
High Performance Cell Transistor for Long Data Retention Time in Giga-bit Density Dynamic Random Access Memory and Beyond
High Density FRAM Technology
High Density FRAM Technology
Challenges and Opportunities in Giga bit DRAMs (Invited Paper)
Data Retention Characteristics of Nitride-Based Charge Trap Memory Devices with High-$k$ Dielectrics and High-Work-Function Metal Gates for Multi-Gigabit Flash Memory

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