High Density FRAM Technology
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概要
- 論文の詳細を見る
Ferroelectric random access memory (FRAM) has been considered as a future memory device due to its ideal properties for data storage element. In spite of the rapid progress in FRAM technology, the FRAM devices can not compete with their counterparts of memory devices because of their low density and poor cost-effectiveness. In this paper, FRAM devices are compared to other memory devices with respect of cell area and cell efficiency, and the current integration issues for developing high density FRAM are systematically reviewed, and finally future FRAM technology is suggested.
- 社団法人電子情報通信学会の論文
- 1999-07-23
著者
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Kim Kinam
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Kim K
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Kim Kinam
Technology Development Team Memory Device Business Samsung Electronics Co.
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Kim Kinam
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Song Yoon
Technology Development Team R&d Center Memory Devices Samsung Electronics Co. Ltd.
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Song Yoon
Technology Development Team Memory Device Business Samsung Electronics Co.
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Kim K.
Advanced Technology Development Semiconductor R&d Centre Samsung Electronics Co. Ltd
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Kim Kinam
Technology Development Memory Device Business Samsung Electronics Co.
関連論文
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