Reduction of Random Noise for CMOS Image Sensors with 2.2μm×2.2μm Pixel
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Kim Kinam
Technology Develoμment Team Semiconductor R&d Center Samsung Electronics Company
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Kim Kinam
Technology Development Team Memory Device Business Samsung Electronics Co.
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Lee Hyunwoo
Process Technology Group Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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JUNG Jongwan
Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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LYU Jeong-Ho
Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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KIM Hwangyoon
Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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SONG Je-Hyuck
Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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YOU Youngsub
Process Technology group, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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NOH Hyunpil
Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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LEE Duck-hyung
Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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Song Je-hyuck
Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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Noh Hyunpil
Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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Kim Hwangyoon
Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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Lee Duck-hyung
Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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Kim Kinam
Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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Lyu Jeong-ho
Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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You Youngsub
Process Technology Group Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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Jung Jongwan
Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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Kim Kinam
Technology Development Memory Device Business Samsung Electronics Co.
関連論文
- Reduction of Random Noise for CMOS Image Sensors with 2.2μm×2.2μm Pixel
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