Data Retention Characteristics of Nitride-Based Charge Trap Memory Devices with High-$k$ Dielectrics and High-Work-Function Metal Gates for Multi-Gigabit Flash Memory

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The data retention characteristics of nitride-based charge trap memories using metal–oxide–nitride–oxide–silicon (MONOS) structures employing high-$k$ dielectrics and high-work-function metal gates have been investigated. The fabricated MONOS devices with structures of TaN/Al2O3/Si3N4/SiO2/$ p$-Si show fast program/erase characteristics with a large memory window of greater than 6 V at program and erase voltages of $\pm 18$ V. From a bake retention test at high temperatures (200, 225, 250, and 275 °C), it is expected to take more than 40 years to lose less than 0.5 V charge loss at 85 °C. In this paper, we present an optimized cell structure for both improved data retention and erase speed, as well as a systematic study on the charge decay process in MONOS-type flash memory for high-density device applications.
2006-04-30