Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-30
著者
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Joo S‐h
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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Park J‐h
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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Kim Kinam
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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SONG Yoon-Jong
Advanced Technology Development, Semiconductor R&D Centre, Samsung Electronics Co. Ltd.
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KIM Hyun-Ho
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
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PARK Jung-Hoon
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
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JANG Nak-Won
Department of Electrical & Electronics Engineering, Korea Maritime University
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JOO Heung-Jin
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
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KANG Seung-Kuk
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
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JOO Seok-Ho
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
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LEE Sung-Young
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
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Park June-hyoung
Center For Near-field Atom-photon Technology Seoul National University
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Lee Sung-young
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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Kang S‐k
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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