Influence of Grain boundary Layers on the Dielectric Relaxation of Nb-Doped SrTiO_3
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-08-15
著者
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Kim Yousoo
Surface Chemistry Laboratory
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Kim S‐h
Samsung Electronics Co. Ltd Kyungki‐do Kor
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Kim Yousoo
Surface Chemistry Laboratory Riken
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Park J‐h
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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Park Jin-goo
Department Of Metallurgy And Materials Engineering Hanyang University
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Kim Y
Lg Electronics Seoul Kor
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KIM Seong-Ho
Division of Ceramics, Korea Institute of Science and Technology
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PARK Jae-Gwan
Division of Ceramics, Korea Institute of Science and Technology
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KIM Yoonho
Division of Ceramics, Korea Institute of Science and Technology
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Kim S‐h
Division Of Ceramics Korea Institute Of Science And Technology
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Seon Ho-won
Division of Ceramics, Korea Institute of Science and Technology
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Park Jae-Hwan
Division of Ceramics, Korea Institute of Science and Technology
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Seon Ho-won
Division Of Ceramics Korea Institute Of Science And Technology
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Kim Y
Surface Chemistry Laboratory Riken
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Park J‐g
Pohang Univ. Sci. And Technol. Pohang Kor
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Kim Yongjo
Surface Chemistry Laboratory, RIKEN
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