Epitaxial Growth of GaN by Helicon Wave Plasma Assisted Metal Organic Chemical Vapor Deposition Process

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-12-30

著者

• Kim S‐h

  Samsung Electronics Co. Ltd Kyungki‐do Kor

• Kim S‐h

  Samsung Electronic Co. Ltd. Kyunggi‐do Kor

• KIM Ki-Sung

  Department of Materials Science & Engineering, Pohang University of Science and Technology

• KIM Seon-Hyo

  Department of Materials Science & Engineering, Pohang University of Science and Technology

• Kim K‐s

  Chonbuk National Univ. Chonbuk Kor

関連論文

• Influence of Defect Segregation on the Electrical Properties of Nb-doped SrTiO_3 Grain Boundary Layer
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• A New, Low-Thermal-Budget Planarization Scheme for Pre-Metal Dielectric Using Electron-Beam Cured Hydrogen Silsesquioxane in Device
• A Novel and Low Thermal Budget Planarization Scheme for Pre-Metal Dielectric Using Electron-Beam Cured HSQ (Hydrogen Silsesquioxane) in STC (Stacked Capacitor) DRAM
• Measurement and Prediction of Lubrication, Powder Consumption, and Oscillation Mark Profiles in Ultra-low Carbon Steel Slabs
• Epitaxial Growth of GaN by Helicon Wave Plasma Assisted Metal Organic Chemical Vapor Deposition Process
• Influence of Grain boundary Layers on the Dielectric Relaxation of Nb-Doped SrTiO_3

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