Kim S‐h | Samsung Electronics Co. Ltd Kyungki‐do Kor
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概要
関連著者
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Kim S‐h
Samsung Electronics Co. Ltd Kyungki‐do Kor
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Kim S‐h
Division Of Ceramics Korea Institute Of Science And Technology
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Lee Moon
Samsung Electronics Co. Semiconductor R&d Center Memory Process Development Team
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Lee M
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Kim Yousoo
Surface Chemistry Laboratory
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Lee Sang-In
Semiconductor R&D Center, Samsung Electronics Co. Ltd.
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Lee Moon
Semiconductor R&d Center Samsung Electronics Co. Ltd
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Kim Yousoo
Surface Chemistry Laboratory Riken
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Park J‐h
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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Lee S‐i
Process Development Team Semiconductor R&d Center Samsung Electronics
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Lee Sang-in
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee S
Ajou Univ. Suwon Kor
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Lee Sang-in
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Sang-in
Memory Business Division Samsung Electronics Inc.
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Lee Sang-in
Semiconductor R & D Center Samsung Electronics Co. Ltd.
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Park Jin-goo
Department Of Metallurgy And Materials Engineering Hanyang University
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Kim Y
Lg Electronics Seoul Kor
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KIM Seong-Ho
Division of Ceramics, Korea Institute of Science and Technology
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PARK Jae-Gwan
Division of Ceramics, Korea Institute of Science and Technology
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KIM Yoonho
Division of Ceramics, Korea Institute of Science and Technology
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LEE Hae-Jeong
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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GOO Juseon
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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KIM Seong-Ho
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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KANG Ho-Kyu
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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Lee H‐d
Korea Res. Inst. Standards And Sci. Taejon Kor
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Lee Moon
Semiconductor R&d Samsung Electronics Co. Ltd.
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Lee Moon
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang H‐k
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Kang Ho-kyu
Process Development Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Ho-kyu
Samsung Electronics Co. Semiconductor R&d Center Memory Process Development Team 2
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Kang Ho-kyu
Ls Process Development Group Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Ho-kyu
Process Development Team Semiconductor R&d Division Samsung Electronics Ltd.
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Lee Soo
Process Development Team Semiconductor R&d Center Samsung Electronics
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Lee Hae-jeong
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Goo Juseon
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim Y
Surface Chemistry Laboratory Riken
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Park J‐g
Pohang Univ. Sci. And Technol. Pohang Kor
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Kang Ho-kyu
Process Development Team Semiconductor R&d Division Samsung Electronics Co.
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Lee H‐j
Process Development Team Semiconductor R&d Center Samsung Electronics
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Kim Yongjo
Surface Chemistry Laboratory, RIKEN
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Kim Seong-Ho
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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Suh Jun-hyuk
Division Of Ceramics Korea Institute Of Science And Technology
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Kim S‐h
Samsung Electronic Co. Ltd. Kyunggi‐do Kor
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KIM Ki-Sung
Department of Materials Science & Engineering, Pohang University of Science and Technology
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KIM Seon-Hyo
Department of Materials Science & Engineering, Pohang University of Science and Technology
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HONG Jin-Gi
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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LEE Hyeon-Deok
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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KIM Byeong
Semiconductor R&D Center, Samsung Electronics Co., LTD.
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Hong Jin-gi
Process Development Team Semiconductor R&d Center Samsung Electronics
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Kim K‐s
Chonbuk National Univ. Chonbuk Kor
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Seon Ho-won
Division of Ceramics, Korea Institute of Science and Technology
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Park Jae-Hwan
Division of Ceramics, Korea Institute of Science and Technology
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Seon Ho-won
Division Of Ceramics Korea Institute Of Science And Technology
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Lee H‐j
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Kim Byeong
Semiconductor R&d Center Samsung Electronics Co. Ltd.
著作論文
- Influence of Defect Segregation on the Electrical Properties of Nb-doped SrTiO_3 Grain Boundary Layer
- A New, Low-Thermal-Budget Planarization Scheme for Pre-Metal Dielectric Using Electron-Beam Cured Hydrogen Silsesquioxane in Device
- A Novel and Low Thermal Budget Planarization Scheme for Pre-Metal Dielectric Using Electron-Beam Cured HSQ (Hydrogen Silsesquioxane) in STC (Stacked Capacitor) DRAM
- Epitaxial Growth of GaN by Helicon Wave Plasma Assisted Metal Organic Chemical Vapor Deposition Process
- Influence of Grain boundary Layers on the Dielectric Relaxation of Nb-Doped SrTiO_3