Lee Sang-in | Semiconductor R & D Center Samsung Electronics Co. Ltd.

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著作論文

Challenge to 0.13μm Device Patterning using KrF
Challenge to 0.13μm Device Patterning using KrF
Challenge to 0.13μm Device Patterning using KrF
The Electrical Properties of Concave-type (Ba,Sr) TiO_3 Capacitors for Advanced Memories
The Electrical Properties of Concave-type (Ba,Sr) TiO_3 Capacitors for Advanced Memories
The Electrical Properties of Concave-type (Ba,Sr) TiO_3 Capacitors for Advanced Memories
A New, Low-Thermal-Budget Planarization Scheme for Pre-Metal Dielectric Using Electron-Beam Cured Hydrogen Silsesquioxane in Device
A Novel and Low Thermal Budget Planarization Scheme for Pre-Metal Dielectric Using Electron-Beam Cured HSQ (Hydrogen Silsesquioxane) in STC (Stacked Capacitor) DRAM
Al-Reflow Process with a "Cap-Clamp" for Sub-Micron Contact Holes
Fast EM Evaluation by Highly Accelerated Current Density
Fast EM Evaluation by Highly Accelerated Current Density
Fast EM Evaluation by Highly Accelerated Current Density
Elimination of Al Line and Via Resistance Degradation under HTS Test in Application of F-Doped Oxide as Intermetal Dielectric
The Origin of Micro-Loading Effect of TEOS-O3 Oxide II
Elimination of Al Line and Via Resistance Degradation under HTS Test in Application of F-Doped Oxide as Intermetal Dielectric

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