Elimination of Al Line and Via Resistance Degradation under HTS Test in Application of F-Doped Oxide as Intermetal Dielectric
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概要
- 論文の詳細を見る
Fluorine-doped silicon oxide (SiOF) as intermetal dielectric (IMD) layer was deposited by conventional plasma-enhanced chemical vapor deposition (CVD). The main issues in the application of SiOF as IMD are as follows: (1) instability of film properties such as stress and refractive index during HTS test, (2) desorption of H2O and HF gases from SiOF film, (3) increase of line resistance, (4) wedgelike defects of metal lines, and (5) via resistance degradation during HTS test at 350°C. The above problems in use of SiOF as IMD can be eliminated by the passivation of IMD with PE-SiN and the application of Ti underlayer before the second metal deposition.
- 1996-02-28
著者
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Chung U-in
Semiconductor R & D Center Samsung Electronics Co.ltd.
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Lee Sang-in
Semiconductor R & D Center Samsung Electronics Co. Ltd.
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Choi Ji
Semiconductor Physics Research Center And Department Of Semiconductor Science And Technology Chonbuk
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Lee Moon-yong
Semiconductor R & D Center Samsung Electronics Co. Ltd.
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Lee Soowong
Semiconductor R & D Center Samsung Electronics Co.ltd.
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HWANG Byung
Semiconductor R & D Center, Samsung Electronics, Co.Ltd.
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FUJIHARA Kazuyuki
Semiconductor R & D Center, Samsung Electronics, Co.Ltd.
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Lee Sang-In
Semiconductor R & D Center, Samsung Electronics, Co. Ltd.,
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Chung U-In
Semiconductor R & D Center, Samsung Electronics, Co. Ltd.,
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