Stress Behavior of High Density Plasma Chemical Vapor Deposition Oxide Deposited on a Metal-Patterned Wafer
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-12-30
著者
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Park Jong
Semiconductor Div. Electronics And Telecommunications Research Institute
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Chung U-in
Semiconductor R & D Center Samsung Electronics Co.ltd.
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Chung U-in
Semiconductor R&d Division Samsung Electronics
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Seo Tae
Semiconductor R&d Division Samsung Electronics
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LEE Soo
Semiconductor R&D Division, SAMSUNG ELECTRONICS
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KIM Min
Semiconductor R&D Division, SAMSUNG ELECTRONICS
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KIM Sun
Semiconductor R&D Division, SAMSUNG ELECTRONICS
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KANG Geung
Semiconductor R&D Division, SAMSUNG ELECTRONICS
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Kang Geung
Semiconductor R&d Division Samsung Electronics
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Park Jong
Semiconductor R&d Division Samsung Electronics
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Kim Sun
Semiconductor R&d Division Samsung Electronics
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Kim Min
Semiconductor R&d Division Samsung Electronics
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Lee Soo
Semiconductor R&d Division Samsung Electronics
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Kim Sun
Semiconductor Laboratory, Samsung Advanced Institute of Technology, Yongin, Gyeonggi 446-712, Korea
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