3D Cell Structure for Low Power and High Performance DRAM : FCAT (Fin-Channel-Array Transistor)(Session A1 Si Novel Device and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))

概要

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Fin-Type cell structure, called Fin-Channel-Array Transistor (FCAT), has been proposed and successfully demonstrated for low power and high performance DRAM devices. FCAT structure is bulk-compatible and can be easily achieved only by recessing the dielectric. To our knowledge, FinFET devices have been applied to develop 512Mb DRAM with sub-70 nm technology for the first time. lt is found that FCAT has a remarkable performance such as excellent short channel effect (SCE) with DIBL of about 13 mV, extremely low sub-threshold swing (SS) of about 75mV/dec, and a high cell current and remarkably low sub-threshold leakage current (〜0.2fA/cell).
社団法人電子情報通信学会の論文
2004-06-23