Investigation of the Contact Resistance between Ti/TiN and Ru in Metal-1/Plate Contacts of Ruthenium Insulator Silicon Capacitor
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概要
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The contact resistance between Ti/TiN and a Ru electrode in metal-1/plate contacts of ruthenium insulator silicon (RIS) capacitor is investigated. When physical vapor deposition (PVD) Ti/TiN was used as a barrier metal for the metal contact process, a high contact resistance of more than 5000 $\Omega$/contact was obtained due to the oxidation of Ti by the residual oxygen in Ru electrode. On the other hand, with a plasma enhanced chemical vapor deposition (PECVD) Ti/CVD TiN barrier metal, oxidation of Ti was not observed and subsequently a low contact resistance of 15 $\Omega$/contact was obtained. The absence of Ti oxidation with PECVD Ti/CVD TiN can be explained by the reduction of oxygen in the Ru electrode due to the H2 plasma environment in the PECVD-Ti process.
- 2003-04-15
著者
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Moon Joo
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Chung U
Process Development Team Semiconductor R & D Center Samsung Electronics Co. Ltd.
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Lee Jong
Process Development Team Semiconductor R & D Center Samsung Electronics Co. Ltd.
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Yun Ju
Process Development Team Semiconductor R & D Center Samsung Electronics Co. Ltd.
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Kim Byung
Process Development Team Semiconductor R & D Center Samsung Electronics Co. Ltd.
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Choi Gil
Process Development Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Sang
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Chung U
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-Ri, Yongin, Kyungki-do 449-900, Korea
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Yun Ju
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-Ri, Yongin, Kyungki-do 449-900, Korea
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Seo Jun
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-Ri, Yongin, Kyungki-do 449-900, Korea
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Kim Byung
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-Ri, Yongin, Kyungki-do 449-900, Korea
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Seo Jung
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-Ri, Yongin, Kyungki-do 449-900, Korea
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Choi Gil
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-Ri, Yongin, Kyungki-do 449-900, Korea
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Moon Joo
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-Ri, Yongin, Kyungki-do 449-900, Korea
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Kang Sang
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24 Nongseo-Ri, Yongin, Kyungki-do 449-900, Korea
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